A kind of preparation method of gate oxide layer

A technology of gate oxide layer and nitrous oxide, which is applied in the direction of semiconductor devices, can solve the problems of high reaction temperature, narrow application range, and fast reaction speed, and achieve the effect of increasing the process window and improving process adaptability

Active Publication Date: 2016-08-03
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
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Problems solved by technology

[0011] The invention provides a method for preparing a gate oxide layer, and one purpose is to solve the problems in the prior art that the reaction speed is fast when preparing a gate oxide layer and it is difficult to prepare an ultra-thin gate oxide layer
[0012] Another object of the present invention is to solve the problem in the prior art that the reaction temperature is too high when preparing the gate oxide layer, resulting in a narrow application range

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  • A kind of preparation method of gate oxide layer
  • A kind of preparation method of gate oxide layer
  • A kind of preparation method of gate oxide layer

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Embodiment Construction

[0034] The preparation method of the gate oxide layer provided by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form, and are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0035] The inventor found in long-term research that O 2 ISSG and N 2 The reaction of OISSG has its own characteristics, specifically, the difference is mainly due to the difference of the oxidizing agent. Then if the two oxidants are used simultaneously, the reaction conditions may be improved, which may meet the needs of producing ultra-thin gate oxide layers. Taking into account the explosive property of hydrogen, and the sequence of feeding oxygen and nitrous oxide, di...

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Abstract

The invention discloses a preparation method for a gate oxide layer. Oxygen and nitrogen monoxide serve as main reaction gas, reaction time of the gate oxide layer can be more effectively and easily controlled, the thickness and uniformity of the prepared gate oxide layer are effectively controlled, so that an ultrathin gate medium layer is obtained, a temperature process window is enlarged, a device for accurately controlling thermal budget can obtain a needed gate medium layer by the aid of the method, and technological adaptability is greatly improved.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for preparing a gate oxide layer. Background technique [0002] In recent years, with the rapid development of very large-scale integration (VLSI) and ultra-large-scale integration (ULSI), more special requirements have been put forward for device processing technology. Among them, the feature size of MOS devices has entered the nanometer era and the requirements for gate oxide layers Just an obvious challenge. The preparation process of the gate oxide layer is a key technology in the semiconductor manufacturing process, which directly affects and determines the electrical characteristics and reliability of the device. [0003] The key performance indicator of MOSFET devices is the drive current, and the magnitude of the drive current depends on the gate capacitance. Gate capacitance is proportional to the surface area of ​​the gate and inversely proport...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
Inventor 张红伟
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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