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Doping method of complementary metal-oxide-semiconductor transistor (CMOS) tube

A technology of doping dose and impurities, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unsatisfactory efficiency

Inactive Publication Date: 2013-06-19
溧阳市虹翔机械制造有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although this method can achieve the effect of reducing parasitic capacitance, but in the doping process of this method, after doping half the dose at a certain angle, the wafer needs to be rotated 180 degrees in the horizontal direction and then re-doped. The other half dose of doping is carried out. Therefore, this method must go through the process of "half dose doping-doping stop-rotate 180 degrees-half dose doping again" during the doping process. The efficiency of the method is not satisfactory

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  • Doping method of complementary metal-oxide-semiconductor transistor (CMOS) tube
  • Doping method of complementary metal-oxide-semiconductor transistor (CMOS) tube

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Embodiment

[0022] Such as figure 2 As shown, the doping method of the CMOS tube proposed by the present invention comprises the following steps:

[0023] 1. On the P-type semiconductor substrate 100, an N-type well is formed by impurity diffusion, and an insulating isolation layer 300 is formed next to the N-type well; thereafter, a gate oxide layer 103 is formed on the surface of the P-type semiconductor substrate 100, and a gate oxide layer is formed on the gate oxide layer. Depositing a hard mask layer 105 on 103;

[0024] 2. The first ion implantation of the drain region 102 of the NMOS tube: the region of the N-type well is coated with photoresist as an ion implantation barrier ( figure 2 not shown in ); the drain region 102 of the NMOS transistor is doped for the first time with the ion beam 200 forming an angle of α with the horizontal direction, the doping impurity is N-type impurity, and the doping dose is the total doping dose of the drain region 102 Wherein, the height o...

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Abstract

The invention discloses a doping method of a complementary metal-oxide-semiconductor transistor (CMOS) tube. The doping method of the CMOS tube comprises accomplishing doping to a source region and a drain region without needs of rotating a substrate by alternate execution of source region ion injection and drain region ion injection, and shelter of a hard mask layer.

Description

technical field [0001] The invention belongs to the field of semiconductor integrated circuit manufacturing, and in particular relates to a doping method of a CMOS tube. Background technique [0002] In the field of semiconductor integrated circuits, complementary metal-oxide-semiconductor (CMOS) transistors are one of the basic units of various circuits. With the development of information technology, the requirements for the processing speed of information data are getting higher and higher, and the requirements for the frequency response characteristics of the CMOS transistors used therein are also getting higher and higher. However, the parasitic capacitance of CMOS transistors plays an increasingly negative role with the increase of operating frequency. How to reduce the influence of these parasitic capacitances on CMOS operational amplifiers has become the key to improving the frequency response characteristics of CMOS transistors. [0003] Please refer to figure 1 ,...

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Application Information

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IPC IPC(8): H01L21/8238H01L21/266
Inventor 吕燕翔居勤坤史仁龙万传友彭芳美周国忠
Owner 溧阳市虹翔机械制造有限公司