Method for manufacturing oxide thin-film transistor
An oxide thin film and transistor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as active layer damage and device performance deterioration
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0027] Such as Figure 1 to Figure 9 As shown, a preparation method of an oxide thin film transistor has the following steps:
[0028] 1) On the cleaned insulating substrate 101, the first conductive layer 102 is formed by radio frequency magnetron sputtering, and photoresist is coated on the first conductive layer 102; using the first mask plate, through exposure, Etching and stripping to form source electrode 102a and drain electrode 102b;
[0029] 2) deposit an oxide active layer 103 on the source electrode 102a and drain electrode 102b, and coat photoresist on the oxide active layer 103; developing, etching and stripping to form the active layer island 103a;
[0030] 3) Depositing the active layer protection layer 104 on the oxide active layer island 103a by atomic layer deposition, using trimethylaluminum and water as reaction precursors, the deposition temperature is 250 degrees, and the thickness is 10nm;
[0031] 4) Depositing an insulating layer 105 on the protecti...
Embodiment 2
[0035] 1) On the cleaned insulating substrate 101, the first conductive layer 102 is formed by radio frequency magnetron sputtering, and photoresist is coated on the first conductive layer 102; using the first mask plate, through exposure, Etching and stripping to form source electrode 102a and drain electrode 102b;
[0036] 2) deposit an oxide active layer 103 on the source electrode 102a and drain electrode 102b, and coat photoresist on the oxide active layer 103; developing, etching and stripping to form the active layer island 103a;
[0037] 3) Depositing the active layer protection layer 104 on the oxide active layer island 103a by atomic layer deposition, using titanium tetrachloride and water as reaction precursors, the deposition temperature is 300 degrees, and the thickness is 5 nm;
[0038] 4) Depositing an insulating layer 105 on the protective layer 104 of the active layer by using a plasma-enhanced chemical vapor deposition method;
[0039] 5) Depositing the sec...
Embodiment 3
[0042] 1) On the cleaned insulating substrate 101, the first conductive layer 102 is formed by radio frequency magnetron sputtering, and photoresist is coated on the first conductive layer 102; using the first mask plate, through exposure, Etching and stripping to form source electrode 102a and drain electrode 102b;
[0043] 2) deposit an oxide active layer 103 on the source electrode 102a and drain electrode 102b, and coat photoresist on the oxide active layer 103; developing, etching and stripping to form the active layer island 103a;
[0044] 3) On the oxide active layer island 103a, the active layer protective layer aluminum oxide and titanium oxide composite layer 104 is deposited by atomic layer deposition, and aluminum oxide uses trimethylaluminum and water as reaction precursors , the deposition temperature is 200 degrees, and the thickness is 10 nm; titanium tetrachloride and water are used as reaction precursors for titanium oxide, the deposition temperature is 200 ...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More