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Silicon carbide single crystal growth device with adjustable axial temperature gradient

A silicon carbide single crystal, crystal growth technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problem of independent adjustment and control of crystal axial growth temperature gradient

Active Publication Date: 2016-04-13
安徽微芯长江半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to overcome the problem that the existing PVT method cannot independently adjust and control the temperature gradient of crystal axial growth without affecting the temperature field distribution of raw materials in the crucible, and provide a novel and practical crucible

Method used

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  • Silicon carbide single crystal growth device with adjustable axial temperature gradient
  • Silicon carbide single crystal growth device with adjustable axial temperature gradient
  • Silicon carbide single crystal growth device with adjustable axial temperature gradient

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The graphite crucible used for growing SiC single crystal by conventional PVT technology was used for crystal growth. The specific dimensions of the graphite are as follows: the thickness of the growth chamber of the crucible is 10 mm, the inner diameter is 95 mm, and the height is 120 mm; the total thickness of the crucible cover is 10 mm, the inner diameter is 95 mm, and the height is 55 mm.

[0022] use figure 2 The design shown is for the machining of graphite crucible lids:

[0023] (1) Use a CNC machine tool to open a groove with a depth of 35mm on the crucible cover wall (such as image 3 -a shown);

[0024] (2) A ring-shaped graphite hard felt with a height of 35 mm (such as image 3 -b shown);

[0025] (3) Fill the insulating material into the hollow layer of the crucible cover.

[0026] Put SiC powder with an average particle size of 500 microns in the crucible material area (i.e. the growth chamber), the material surface is 50 mm away from the seed crys...

Embodiment 2

[0029] The graphite crucible used for growing SiC single crystal by conventional PVT technology was used for crystal growth. The specific dimensions of the graphite are as follows: the thickness of the growth chamber of the crucible is 10 mm, the inner diameter is 95 mm, and the height is 120 mm; the total thickness of the crucible cover is 10 mm, the inner diameter is 95 mm, and the height is 55 mm.

[0030] use figure 2 The design shown is for the machining of graphite crucible lids:

[0031] (1) Utilize the CNC machine tool to open a groove with an outer diameter of 109mm, an inner diameter of 101mm and a depth of 35mm on the crucible cover wall (such as Figure 4 shown);

[0032] (2) be processed by numerical control machine tool and make outer diameter 109mm, internal diameter 101mm, height is the annular graphite hard felt of 15mm;

[0033] (3) make outer diameter 109mm by numerical control machine tool, internal diameter 101mm, height is the annular graphite of 20mm...

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Abstract

The invention relates to the technical field of crystal growth, specifically to a growing apparatus for a large-size silicon carbide (SiC) single crystal by using a physical vapor transport process (PVT). Specifically, the apparatus is a crucible structure applicable to growth of the SiC single crystal through physical vapor transport. According to the invention, a crucible cover is processed into a jacketed wall structure, and a sandwich hollow layer is located in the middle of the structure; then a thermal insulation material (which is completely attached to the whole sandwich hollow layer) with a specially-produced shape is placed in the sandwich hollow layer of the crucible cover. The growing apparatus provided by the invention can determine appropriate thickness distribution of a thermal insulation layer according to the size of axial-temperature gradient, thereby allowing a controllable rate of crystal growth to be realized.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a device for growing large-sized silicon carbide (SiC) single crystals by physical vapor transport (PVT), and more particularly to a device for growing silicon carbide single crystals by physical vapor transport (PVT) crucible. Background technique [0002] As a representative of the third-generation semiconductor single crystal material, SiC crystal has high hardness (second only to diamond), high thermal conductivity (4.9W / cm K), and low thermal expansion coefficient (3.1-4.5×10 -6 / K), large band gap (2.40-3.26eV), high saturation drift speed (2.0-2.5×10 7 cm / s), the critical breakdown field is strong (2~3×10 6 V / cm), high chemical stability, strong radiation resistance and other excellent properties. These excellent properties make SiC crystals have broad application prospects in high temperature, high pressure, and strong radiation working environments, and have an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/00C30B29/36
Inventor 刘熙严成峰忻隽孔海宽肖兵杨建华施尔畏
Owner 安徽微芯长江半导体材料有限公司