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Simple mask-cleaning method

A mask and simple technology, applied in the field of cleaning, can solve the problems of long time period, dirty, dirty mask, etc., and achieve the effect of saving cost, ensuring accuracy, and simple and easy method

Inactive Publication Date: 2013-07-03
CHANGZHOU TONGTAI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The mask plate is an indispensable pattern transfer tool in lithography technology, and plays an important role in whether the pattern can be transferred accurately; with the different exposure conditions in lithography, the mask plate will also have contact and non-contact with the photoresist. Contact relationship, after a period of time, the effective area will appear dirty, resulting in graphics transfer can not be completed as expected
In view of this, the mask plate needs to be cleaned after a period of use. Generally, the mask plate will be sent to a special cleaning factory for cleaning, but the cleaning of the mask plate is often dirty or regular, so it is sent to the cleaning The manufacturer’s method takes a long time, and the mask plate will be taken to the non-clean room area, which is not very convenient for actual production

Method used

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Examples

Experimental program
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Effect test

example 1

[0024] The concentration of concentrated sulfuric acid used in this example is 98%, the concentration of hydrogen peroxide is 31%, the SPM mixture is composed of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1, the SPM container is a quartz tank, the temperature is 70°C, and the high-purity nitrogen gas is 5N, dust-free cloth is electronic grade, deionized water is square resistance 18MΩ / □, mask plate holder is made of PP material, the cleaning flow chart is as follows figure 1 shown. In order to test the cleaning effect, the products after the photolithography of the mask plate were detected before cleaning to obtain figure 2 the results shown, figure 2 Medium and large areas of red marks are caused by dirty masks. The main process of cleaning is as follows: put the material rack containing the mask plate in the SPM mixture at a temperature of 70°C for 5 minutes, then take it out and place it in deionized water to overflow for 3 times, and then...

example 2

[0026] The machine and method used in the test in this example are the same as in Example 1, except that the temperature of the SPM in this example is increased to 120° C., and the soaking time is increased to 20 minutes. The implementation process of this example draws on the results of Example 1, raising the temperature of SPM to 120°C to make the foaming of hydrogen peroxide more intense, and the soaking time is correspondingly increased to increase the contact time of the mask in the SPM solution. After the mask plate was cleaned, the test method in Example 1 was still used to detect the pattern transfer of the product after photolithography. It was found that the dirt on the mask plate had been cleaned. There was no fixed red mark in the test result in Figure 4, which satisfied the process. Production requirements, so far the cleaning has reached the expected goal, and the mask plate can be put into production.

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Abstract

The invention relates to a simple mask-cleaning method. A mask to be cleaned is placed in a container including concentrated sulfuric acid and hydrogen peroxide mixed solution (SPM) to be soaked for several minutes, is sequentially flushed by deionized water and absolute ethyl alcohol and is finally blown to dry by high-purity nitrogen. By detecting the cleanliness of the mask via a photoetching product, a user discovers that original sewage is removed from the mask cleaned by the method to realize cleanliness and the cleaned mask can be put into production again.

Description

technical field [0001] The invention relates to a cleaning method, in particular to a simple cleaning method for a mask. Background technique [0002] Lithography is a kind of photon beam or particle beam, which is irradiated on the coated photoresist (or photoresist) through a mask composed of transparent and non-transparent patterns, using light to The photosensitivity or resistivity of the resist forms a photosensitive area that is consistent with the pattern of the mask plate (positive resist) or complementary (negative resist), and then undergoes chemical development to remove or retain the photoresist pattern obtained in these areas. Photolithography is one of the most effective means of patterning high-precision micro-geometry shapes. It can reproduce micro-patterns on a large scale for production. It is a low-cost and high-efficiency processing technology and the core technology in semiconductor technology. The mask plate is an indispensable pattern transfer tool in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/82B08B3/08
Inventor 涂亮亮江成龙戴晓金石剑舫盛建明
Owner CHANGZHOU TONGTAI PHOTOELECTRIC
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