Manufacturing method of low-cost surface layer type semiconductor ceramic capacitor porcelain

A technology for ceramic capacitors and manufacturing methods, applied in piezoelectric/electrostrictive/magnetostrictive devices, circuits, electrical components, etc., can solve the problems of unstable doping effect, insufficient amount of solid solution, and high cost, etc. To achieve the effect of easy reduction and oxidation, increase the sanding and refining process, and improve the performance of the porcelain material

Active Publication Date: 2014-08-20
BAOJI QINLONG ELECTRONICS SCI & TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing technologies generally use high-purity raw materials and traditional techniques to produce porcelain materials, and generally suffer from low εr and unstable techniques
Moreover, it shows that the doping effect is unstable, and the amount of solid solution with neutral vacancy at the Ba site is insufficient.
The most prominent is that high-purity raw materials must be used to keep the cost high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Step 1: Doping BaTiO 3 Synthesis of briquettes;

[0019] Raw material formula: BaCO 3 68Wt%, industrial grade TiO 2 29Wt%, neodymium oxide Nd 2 o 3 3.0Wt%;

[0020] Synthesis process: first mix the raw materials according to the above weight ratio, and then use the mixing ball mill to press the prepared raw materials: ball: water = 1:2:0.8 mixed ball mill for 3 hours; continue sanding for 5 hours and then push the plate Furnace Calcination Synthesis of Doped BaTiO 3 Burn the block, the synthesis temperature and holding time are 1240±5℃ / 2H, and then the doped BaTiO synthesized at high temperature 3 The burnt block is crushed and sieved, and finally the crushed and sieved burnt block is detected;

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PUM

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Abstract

The invention discloses a manufacturing method of low-cost surface layer type semiconductor ceramic capacitor porcelain. The manufacturing method comprises the following step: a first step of synthesizing doped BaTiO3 clinker; a second step of synthesizing Tc migration agent clinker; and a third step of manufacturing porcelain. According to the manufacturing method of low-cost surface layer type semiconductor ceramic capacitor porcelain, industrial-level or electronic I-level TiO2 can be used for replacing high-purity TiO2, a novel process adopting synthesis doping one-step process is adopted for replacing the conventional process, so that the porcelain production cost is greatly reduced, and the porcelain performances can completely satisfy the requirements. Besides, a plurality of doped rear-earth elements are used for replacing highly-valent neodymium oxide rear-earth elements, so that the production cost is further reduced; moreover, the porcelain performances also can be remarkably improved.

Description

technical field [0001] The invention belongs to the field of electronic materials, and in particular relates to a method for manufacturing low-cost surface-layer semiconductor ceramic capacitor ceramic material. Background technique [0002] Semiconductor ceramic capacitors are generally divided into three categories, namely barrier layer type, surface layer type and grain boundary layer type. The surface layer type has the advantages of large specific volume, good manufacturability, simplicity, and easy mass production. It is widely used in various electronic products such as communications and computers. For ceramic materials used in surface layer semiconductor ceramic capacitors, the following three conditions should be met at the same time: (1) The εr of the ceramic material itself should be as large as possible; (2) The structure of the ceramic material should be dense, and the grain It should be fine and uniform; (3) The ceramic material should be easy to reduce and r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/187C04B35/468C04B35/622
Inventor 陈玉林
Owner BAOJI QINLONG ELECTRONICS SCI & TECH CO LTD
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