Projection lens polarization aberration in-situ detection method of photoetching machine
A projection objective lens, in-situ detection technology, applied in the field of lithography machine, can solve the problems of complex structure of detection system, phase error, limited polarization aberration measurement range, etc.
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[0057] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.
[0058] figure 1 Schematic diagram of the structure of the projection objective polarization aberration detection system used in the present invention, including a light source 1 that generates an illumination beam, an illumination system that adjusts the illumination mode (including polarization illumination mode) and partial coherence factor of the beam emitted by the light source 1 and makes the beam uniformly illuminated 2. A mask table equipped with a mask and using a positioning system 6 to achieve precise positioning 3. A mask 4 including a polarization aberration detection mark 5. A projection objective lens with large numerical aperture capable of imaging the mask pattern and having an adjustable numerical aperture 7. A workpiece table 8 capable of carrying silicon wafers and using...
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