A kind of ultraviolet light-emitting diode with dbr high reflection structure and its preparation method

A technology of light-emitting diodes and reflective structures, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low light extraction efficiency, achieve high ultraviolet reflectivity, good ohmic contact performance, and improve light extraction efficiency.

Active Publication Date: 2016-03-02
山西中科潞安紫外光电科技有限公司
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Problems solved by technology

[0005] The problem to be solved by the present invention is the problem of low light extraction efficiency in the light output structure on the back of the ultraviolet light emitting diode, and has the effect of optimizing the output waveform and light field distribution of the ultraviolet light emitting diode

Method used

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  • A kind of ultraviolet light-emitting diode with dbr high reflection structure and its preparation method
  • A kind of ultraviolet light-emitting diode with dbr high reflection structure and its preparation method
  • A kind of ultraviolet light-emitting diode with dbr high reflection structure and its preparation method

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0027] The invention discloses an ultraviolet light-emitting diode with a DBR high-reflection structure and a preparation method thereof.

[0028] figure 1 A cross-sectional and top view structural schematic diagram of an AlGaN-based ultraviolet light-emitting diode with a DBR high-reflection structure in a preferred embodiment of the present invention is shown. like figure 1 As shown, the AlGaN-based ultraviolet light-emitting diodes include:

[0029] Substrate 11, the material of the substrate 11 is sapphire, SiC or AlN;

[0030] The AlN nucleation layer 12 is grown on the substrate 11 by metal organic compound vapor deposition (MOCVD). The AlN nucleation layer 12 is divided into two layers. The first layer is a low...

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Abstract

The invention discloses an AlGaN radical distributed bragg reflector DBR highly reflective ultraviolet light-emitting diode and a manufacturing method of the ultraviolet light-emitting diode. The ultraviolet light-emitting diode comprises a substrate, an AlN nucleating layer, an n type AlGaN barrier layer, an active area, a p type AlGaN barrier layer and a p type GaN emitting layer in sequence, wherein a DBR highly reflective structure is manufactured on the p type AlGaN barrier layer. After rays which are absorbed by the p type GaN emitting layer in the ultraviolet light-emitting diode are reflected by the DBR highly reflective structure, the rays are emitted from the bottom, so that power and efficiency of emitting light are greatly improved. The ultraviolet light-emitting diode device and the manufacturing method of the ultraviolet light-emitting diode device are simple in technology, good in repeatability and high in reliability and can be applied to fields such as purification of air / water, medical treatment, biomedicine, white-light illumination and space communication.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to an ultraviolet light-emitting diode with a resonant high-reflection film and a preparation method thereof. Background technique [0002] As an outstanding representative of the third-generation semiconductor materials, III-V compound semiconductor materials have many excellent characteristics, especially in optical applications. The alloy {Ga(Al,In)N} composed of Ga, Al, In, N Can cover the entire visible light region and near ultraviolet light region. Moreover, the group III nitrides with fibrillite structure have direct band gaps, which are very suitable for the application of optoelectronic devices. Especially in the ultraviolet region, the AlGaN-based multi-quantum well ultraviolet LED has shown great advantages, and has become one of the hot spots in the development of ultraviolet optoelectronic devices. However, as the light-emitting wavelength of LEDs becomes shor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10H01L33/00
Inventor 曾建平闫建昌王军喜丛培沛孙莉莉董鹏李晋闽
Owner 山西中科潞安紫外光电科技有限公司
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