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Photoelectric conversion element

A technology for photoelectric conversion elements and photoelectric conversion layers, applied in electrical components, photovoltaic power generation, circuits, etc., can solve the problem of weak adhesion between Mo layer and CIGS film, and achieve high peeling inhibition effect and high adhesion effect

Inactive Publication Date: 2013-07-10
FUJIFILM CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Non-Patent Document 1 mentions: MoSe formed into layers 2 The bond between the layers is a weak bond caused by Van Der Waals force, so MoSe is formed in a layered 2 The adhesion between the Mo layer and the CIGS film becomes weaker

Method used

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  • Photoelectric conversion element
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  • Photoelectric conversion element

Examples

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example

[0134] For the photoelectric conversion elements, samples (samples) of examples and comparative examples were produced, and the interfaces of the samples were observed and an adhesion test (cross cut test) was performed.

example ）

[0136] Samples of examples of the photoelectric conversion element of the present invention were produced by the following method.

[0137] First, a soda-lime glass substrate of 3 cm×3 cm×1.1 mmt was prepared, and ultrasonic cleaning was performed for 5 minutes each with acetone, ethanol, and pure water.

[0138] Then, introduce the substrate into the sputtering device, use radio frequency (Radio Frequency, RF) sputtering, the RF power is 800W, the Ar gas (gas) pressure is 1.0Pa, and the substrate temperature is room temperature, sputtering on the substrate to form Film. The film formation time was adjusted so that the film thickness was approximately 600 nm.

[0139] Then, by the so-called three-stage method, 2 μm of Cu(In 0.7 Ga 0.3 ) Se 2 film as a photoelectric conversion layer (semiconductor layer). The substrate temperature in the second stage and the third stage in the three-stage method was set to 550°C. Furthermore, a K cell (knudsen-Cell: Knudsen cell) was used...

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Abstract

[Problem] To improve adhesion in a photoelectric conversion element provided with a photoelectric conversion layer formed by vapor deposition on an electroconductive layer made of a transition metal. [Solution] A photoelectric conversion element (1) has, on a substrate (10), a multi-layered structure including: an electroconductive layer (20) made of a transition metal element; a photoelectric conversion layer (30) made of a compound semiconductor containing a group IB element, a group IIIB element, and a group VIB element; and a transparent electrode (60), wherein the photoelectric conversion element (1) is configured to comprise, between the electroconductive layer (20) and the photoelectric conversion layer (30), a transition metal dichalcogenide thin film (25) made of a transition metal element and a group VIB element. Of a plurality of microcrystals (25a) constituting the transition metal dichalcogenide thin film (25), microcrystals having a c axis formed substantially perpendicular to the surface of the electroconductive layer (20) occupy no more than 80% of the surface of the electroconductive layer (20) on which the thin film is formed.

Description

technical field [0001] The present invention relates to a photoelectric conversion element used in a solar cell, a charge coupled device (Charge Coupled Device, CCD) sensor (sensor) and the like. Background technique [0002] A photoelectric conversion element including a photoelectric conversion layer and an electrode connected to the photoelectric conversion layer is used for applications such as solar cells. In the past, Si-based solar cells using bulk (bulk) single-crystal Si or polycrystalline Si, or thin-film amorphous (amorphous) Si were the mainstream, but compounds that do not rely on Si have been researched and developed. Semiconductor solar cells. As compound semiconductor-based solar cells, bulk-type solar cells such as GaAs-based solar cells and thin-film solar cells such as CIGS-based solar cells containing group Ib elements, group IIIb elements, and group VIb elements are known. CIGS is formed by the general formula Cu 1－z In 1－x Ga x Se 2－y S y (wherei...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04
CPCH01L31/022425H01L31/03923Y02E10/541
Inventor 小林宏之福永敏明村上直树
Owner FUJIFILM CORP