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A technology of corrosive liquid and ionic compounds, applied in the field of materials, can solve problems such as damage, scratches, corrosion and removal of mercury cadmium telluride thin films
Active Publication Date: 2013-07-17
11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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Problems solved by technology
Since the CdZnTe material is a soft and brittle material, it is easy to chip and slag during the grinding process to scratch the substrate surface and form deep damage, or the thickness of the CdZnTe substrate material will be uneven during the polishing process. Uniform, and because chemical polishing can only remove the thickness uniformly, it is easy to cause the CdZnTe substrate to be completely removed, and the HgCdTe film may also be corroded to remove a certain thickness
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Embodiment 1
[0027] An embodiment of the present invention provides an etching solution, which is used to corrode a CdZnTe substrate under a mercury cadmium telluride film. The etching solution includes a dissolving agent, a buffer and an oxidizing agent;
[0028] The dissolving agent is nitric acid or phosphoric acid, and each liter of the corrosion solution includes 85-110g of nitric acid or 50-75g of phosphoric acid;
[0029] The buffering agent is lactic acid or polyacrylic acid, and each liter of the corrosion solution includes 0.2-2.0 g of lactic acid or 4-8.0 g of polyacrylic acid;
[0030] The oxidizing agent is a permanganate ion compound or a dichromate ion compound, and each liter of the corrosion solution includes 60-90g of permanganate ion or 140-165g of dichromate ion.
[0031] The oxidizing agent in the embodiment of the present invention can also be the mixture of permanganate ion compound and dichromate ion compound, when the described oxidizing agent is the mixture of per...
Embodiment 2
[0038] An embodiment of the present invention provides an etching method, which uses any of the etching solutions in the above embodiments for etching, see figure 1 , the method includes:
[0039] S101. Perform mechanical polishing and mechanochemical polishing on the CdZnTe substrate grown under the HgCdTe film, so that the CdZnTe substrate has a thickness of 15-25 μm;
[0040] S102. Put the mechanically polished CdZnTe substrate with the HgCdTe film grown on it into the etching solution for etching, the temperature of the etching solution is 20-30°C, and the etching time is 40-90s;
[0041] S103, the mercury cadmium telluride thin film obtained by cleaning with alcohol after etching.
[0042] Wherein, the crystal orientation of the cadmium zinc telluride substrate in the embodiment of the present invention is or , and the composition is Cd 0.96 Zn 0.04 Te, the mercury cadmium telluride thin film is obtained on the surface of the cadmium zinc telluride substrate by liquid...
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Abstract
The invention discloses an etching solution and an etching method. The etching solution comprises nitric acid or phosphoric acid, a buffering agent, a permanganate ionic compound or dichromate ionic compound, or a mixture of the permanganate ionic compound and the dichromate ionic compound; each litre of etching solution comprises 85-110g / L of nitric acid, 0.2-2.0g / L of buffering agent and 60-90g / L of permanganate ionic compound; or each litre of etching solution comprises 85-110g / L of nitric acid, 0.2-2.0g / L of buffering agent and 140-165g / L of dichromate ionic compound. The etching method comprises the following steps of: carrying mechanical polishing on a CdZnTe substrate on which a HgCdTe film grows, so that the remaining HgCdTe is 15-25 micrometers; and then putting the CdZnTe substrate into the etching solution to carry out etching, and cleaning the etched CdZnTe substrate by using absolute ethyl alcohol to obtain the HgCdTe film. The etching solution disclosed by the invention can be used for effectively etching the CdZnTe substrate under the HgCdTe film and has little influence on the HgCdTe film.
Description
technical field [0001] The invention relates to the field of material technology, in particular to an etching solution and an etching method. Background technique [0002] The HgCdTe thin film material and the CdZnTe substrate material will form a mutual-dissolution buffer layer under the action of high temperature during the epitaxy process, and the substrate material needs to be removed when studying the properties of the HgCdTe thin film at the mutual dissolution point. Generally, the removal technology of CdZnTe substrate material is to adhere the CdZnTe substrate and HgCdTe thin film material on the glass substrate as a whole, with the substrate material facing up, and successively adopt the methods of mechanical grinding or turning, mechanical polishing and chemical corrosion. remove. Since the CdZnTe material is a soft and brittle material, it is easy to chip and slag during the grinding process to scratch the substrate surface and form deep damage, or the thickness ...
Claims
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Application Information
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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/30
Inventor 李春领侯晓敏刘海龙张瑛侠孙海燕
Owner 11TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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