Process method of depositing and doping pt on semiconductor silicon wafer
A process method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of waste, expensive production equipment, high cost of production materials, etc., reduce production costs, reduce production investment funds, and benefit The effect of mass production
Active Publication Date: 2016-03-09
江苏新顺微电子股份有限公司
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Problems solved by technology
Because metal Pt is non-directional in the process of depositing silicon wafers, many of them are deposited in production equipment, so it will cause a lot of waste, which is one of the shortcomings of this technology; in addition, the production materials used in this technology High cost, expensive production equipment is another drawback
Method used
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Experimental program
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Embodiment Construction
[0011] The invention relates to a process method for depositing and doping Pt on a semiconductor silicon wafer, the method comprising the following steps:
[0012] Step 1: Taking advantage of the fact that chloroplatinic acid is easily soluble in isopropanol and isopropanol is volatile, first mix chloroplatinic acid and isopropanol according to the ratio of 1g:10-100ml, and after mixing, let it stand at room temperature for more than 24 hours ;
[0013] Step 2: Apply the mixed solution after standing still on the surface of the silicon wafer with a brush. After the silicon wafer is coated, place it at room temperature for more than 2 hours. Part of the crystallization water in the chloroplatinic acid is removed, and at this time, the chloroplatinic acid substance ((H 3 O) 2PtCl 6 .nH 2 O);
[0014] Step 3: Put the above silicon chip into the N 2 900-1000°C high-temperature treatment in a high-temperature diffusion furnace, and the treatment time is more than 15 minutes. A...
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The invention relates to a technique of depositing and doping Pt on a semiconductor silicon wafer. The technique is characterized by comprising the following steps of 1, mixing chloroplatinic acid and isopropanol according to a proportion of 1g:(10-100)ml, and standing for more than 24h at a room temperature, 2, coating the surface of the silicon wafer with a mixed solution after standing by virtue of a writing brush, and placing the coated silicon wafer for more than 2h at the room temperature, and 3, placing the silicon wafer in a high-temperature diffusion furnace filled with N2 for 900-1000 DEG C high-temperature processing for more than 15min. According to the technique, the traditional physical Pt depositing technology is changed; a chemical Pt depositing technology is applied in the Pt doping technology; the production cost is lowered; the production fund investment is reduced; and large-scale production and manufacturing are facilitated.
Description
technical field [0001] The invention relates to a process method for depositing and doping Pt on a semiconductor silicon wafer. It belongs to the technical field of integrated circuit or discrete device manufacturing. Background technique [0002] A very critical process in the production of discrete device switching diodes and fast recovery diode chips is heavy metal doping; after doping heavy metals in semiconductor silicon, heavy metal atoms will occupy the silicon in the form of substitution or interstitial filling, forming deep energy This shortens the minority carrier recombination distance, greatly increases the minority carrier recombination probability, reduces the minority carrier lifetime, and thus achieves the purpose of reducing the reverse recovery time. Without this process, the reverse recovery time of the produced diode chip is very long and cannot be used in high-frequency circuits. Pt is one of the doped metals. [0003] At present, domestic semiconducto...
Claims
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IPC IPC(8): H01L21/225
Inventor 朱瑞吕伟丁军陈晓伦冯东明其他发明人请求不公开姓名
Owner 江苏新顺微电子股份有限公司