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193-nanometer p-light large-angle Anti-reflection film element and preparation method thereof

A thin-film component and anti-reflection technology, which is applied in the field of 193nm P light large-angle anti-reflection thin-film components and its preparation, can solve the problems of ArF excimer laser beam quality and output efficiency reduction, serious optical loss, etc., and achieve good environmental stability , wide spectral bandwidth, wide angular tolerance effect

Inactive Publication Date: 2013-08-14
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The purpose of the present invention is to solve the serious optical loss caused by multiple oscillations when 193nm P light is incident on the triangular prism beam expander prism group at 74°, and cause the beam quality and output efficiency of the ArF excimer laser to be greatly reduced. It provides a 193nm P light large-angle anti-reflection film element and preparation method thereof

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  • 193-nanometer p-light large-angle Anti-reflection film element and preparation method thereof
  • 193-nanometer p-light large-angle Anti-reflection film element and preparation method thereof
  • 193-nanometer p-light large-angle Anti-reflection film element and preparation method thereof

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Embodiment Construction

[0034] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0035] Such as figure 1 As shown, in the ArF excimer laser adopting linewidth narrowing optical module, three right-angle beam expander prisms are included for optical beam expansion. It is necessary to coat the slope of the prism with an anti-reflection film to reduce the reflection loss and improve the performance of the ArF laser. output efficiency.

[0036] Such as figure 2As shown, in the three right-angle beam expander prisms, the P-polarized ArF excimer laser is incident on the inclined plane (C) of the beam expander prism at a large angle θ, and the degree of the apex angle α of the prism is adjusted according to the incident angle and the refractive index of the prism to ensure The laser beam is perpendicularly incident on the rectangular face (B) of the beam expander prism.

[0037] The 193nm P light large-angle anti-reflection fi...

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Abstract

The invention provides a 193-nanometer P-light large-angle anti-reflection film element and a preparation method thereof, belongs to the technical field of ArF excimer laser application, and solves the problems that optical loss is serious when 193-nanometer P-light 74-degree incidence prism beam-expands a prism group, and results in that the beam quality and the output efficiency of an ArF excimer laser are reduced greatly. The film element comprises four MgF2 film layers and three LaF3 film layers which are formed on a CaF2 substrate alternately, wherein the thickness of each LaF3 film layer ranges from 29.7 nm to 30.3 nm. The anti-reflection film element and the preparation method thereof can ensure that the P-polarization-state ArF laser 74-degree incidence prism has a lower reflectivity when beam-expands the prism group, and the output efficiency of the ArF laser is improved greatly.

Description

technical field [0001] The invention relates to the technical field of ArF excimer laser application, in particular to a 193nm P-light large-angle anti-reflection film element and a preparation method thereof. Background technique [0002] In recent years, 193nm ArF excimer lasers have been widely used as light sources for deep ultraviolet lithography machines. With the development of lithography technology, the power of lasers used in 193nm lithography machines is increasing day by day, thus putting forward higher requirements on the wavelength accuracy and output efficiency of ArF excimer lasers. In the ArF excimer laser, in order to achieve an extremely narrow wavelength output, a linewidth narrowing module is required. The line width narrowing module is the core component used to narrow the line width of the wide laser emission spectrum generated by the discharge in the ArF laser cavity. It not only determines the output line width of the ArF excimer laser, but also aff...

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Application Information

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IPC IPC(8): G02B1/11C23C14/06C23C14/22G02B1/115
Inventor 金春水靳京城李春邓文渊常艳贺
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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