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352results about How to "No degradation" patented technology

Electrical insulating resin material, electrical insulating material, and electric wire and cable using the same

InactiveUS6479590B1Easy to processSuperior low temperature forming propertyPlastic/resin/waxes insulatorsInsulated cablesPolymer scienceAlkene
The present invention relates to a resin material for an electrical insulating material, an electrical insulating material and electric wire and cable using the same. A resin material for an electrical insulating material according to present invention is characterized in that the resin component thereof comprises an ethylene alpha-olefin copolymer (A) which satisfies specific conditions, such as a density of 0.92~0.96 g/cm3, a melt flow rate (MFR) of 0.01~200 g/10 minutes, a molecular weight distribution (Mw/Mn) of 1.5~5.0, and possessing only one peak in terms of the number of peaks observed in an elution temperature-eluted amount curve as measured by the temperature raising elution fractionation (TREF) method, etc., wherein said resin component contains a unit derived from at least one type of monomer selected from among a carbonyl or carbonyl derivative group-containing monomer, a hydroxyl group-containing monomer, a nitro group-containing monomer, a nitrile group-containing monomer, an aromatic ring-containing monomer, and a compound or monomer containing two or more ethylenic linkages. This resin material for an electrical insulating material is suitable for use in an electrical insulating material for an electric wire and cable, as it exhibits excellent processability and electrical insulating properties without degradation of the mechanical strength, and even after cross-linking, exhibits superior electrical insulating properties.
Owner:JAPAN POLYOLEFINS CO LTD

Aramid fiber coated with inorganic nanoparticles on surface and preparation method thereof

InactiveCN103572583AGood long-term usabilityWide UV absorption rangeFibre typesRare earth metal compoundsInorganic nanoparticlesUltraviolet
The invention relates to aramid fiber coated with inorganic nanoparticles on the surface and a preparation method thereof. The preparation method comprises the following steps: functionalizing the surface of the aramid fiber to enable the surface of the fiber to contain methoxy groups; hydroxylating calcium-oxide-doped cerium oxide and reacting the cerium oxide with the fiber to obtain the aramid fiber coated with the inorganic nanoparticles on the surface. According to the invention, the hydroxylated calcium-oxide-doped cerium oxide is an inorganic particle with the photocatalytic activity much lower than that of ultraviolet absorbents such as TiO2 and zinc oxide; the inorganic particles can absorb ultraviolet rays to protect the fiber from damage caused by the ultraviolet rays, and the damage caused by a photocatalytic action of the inorganic particles to the fiber during ultraviolet radiation can be avoided, so that the hydroxylated calcium-oxide-doped cerium oxide is a safe, effective and long-lasting ultraviolet absorber. The surface of the modified aramid fiber is provided with a large number of reactive groups, so that adhesion of the modified aramid fiber to a lot of substrates can be improved, and thus the application field of the fiber is widened; the nanoparticles with high heat resistance are coated on the surface of the fiber, so that the thermal property of the fiber can be effectively improved.
Owner:SUZHOU UNIV

Special soilless organic composite matrix for raising seedlings of mechanically-transplanted japonica rice and preparation method of matrix

InactiveCN103848697AEasy to get materialsLow transportation and production costsFertilizer mixturesJaponica riceRice straw
The invention belongs to the field of rice culturing and in particulates to a special soilless organic composite matrix for raising seedlings of japonica rice. The matrix taking agricultural wastes as materials comprises the following components in percentage by weight: 55%-65% of rice straw, 25%-35% of cow dung, 5%-10% of rice husk, 2%-3% of carbamide, 1.5%-2.0% of straw-decomposing inoculants, 15% of peat, 1%-3% of nitrogen phosphorus and potassium fertilizers, 0.015%-0.006% of seedling growing agent and 0.002% of root growth promoting agent. The special soilless organic composite matrix for raising seedlings of japonica rice has the advantages that the local agricultural wastes serve as the main raw materials, so that the matrix is available in material, low in transportation and production cost, facilitates the cyclic utilization of the agricultural wastes, reduces the pollution to the environment, completely solves the problems that the vegetation is damaged when soil is extracted for raising the seedlings and the soil is extracted difficultly and reduces the labor strength and cost for processing the extracted soil; in addition, auxiliary additives are organic non-toxic products, easy to degrade in a farmland ecosystem and free of secondary pollution; the matrix is long in time period suitable for planting the seedlings; the time period of the matrix suitable for planting the seedlings can be extended to 28 days; and the matrix is great in range of seedling ages and strong in adaptively in date of seeding.
Owner:RICE RES ISTITUTE ANHUI ACAD OF AGRI SCI

Preserving fluid and preserving method for maintaining high cell activity of tissue sample

The invention provides a preserving fluid and a preserving method for maintaining high cell activity of a tissue sample, wherein the preserving fluid comprises the components: ion buffer solution components, carbohydrate components,, components avoiding the generation of ice crystals in and out solutions of tissue cells at a low temperature of 0-6 DEG C, components providing supplement, antioxidant and anti-apoptosis components for anabolism of the tissue cells; the preserving fluid has good biocompatibility, does not contain toxic or harmful components, and also does not contain components such as animal-derived protein, antibiotics and hormones influencing tissue gene expression. Different from traditional ultralow-temperature cryopreservation (-80 DEG C), the cryopreservation method disclosed by the invention can effectively realize low-temperature storage (0-6 DEG C) of fresh tissue samples of human beings and animals, maintains high cell activity of tissues, maintains tissue morphology, and is used for preservation and transportation of the tissue samples. Meanwhile, the nucleic acid integrity of the tissue and the stability of gene expression can be effectively maintained, the original state of the tissue is maintained, and the method can be used for gene detection, scientific research and other related experiments.
Owner:上海伯豪生物技术有限公司

Enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and manufacturing method thereof

The invention relates to an enhanced AlGaN/GaN HEMT (High Electron Mobility Transistor) device and a manufacturing method thereof, belonging to the technical field of semiconductor devices. The device comprises an AlGaN/GaN heterojunction structure located on the surface of a substrate and gate, source and drain electrode structures, wherein F ion or Cl ion fixed negative charges are arranged in a gate dielectric film material. In the invention, through introducing the F ion or Cl ion fixed negative charges into a gate dielectric film and controlling the electric charge quantity of the introduced fixed negative charges, the threshold voltage of a transistor is regulated and the enhanced AlGaN/GaN HEMT device with the threshold voltage greater than zero is realized. In the invention, the enhanced AlGaN/GaN HEMT device structure is obtained though a method of introducing the fixed negative charges into the gate dielectric film material; interface characteristics of the AlGaN/GaN heterojunction are not influenced so that the performance degeneration of the device is not caused; the process is simple and controllable and is compatible with the manufacturing process of a depletion mode (normally-on) AlGaN/GaN HEMT device; the source-drain saturation current density and the gate-drain current of the manufactured device for manufacturing a GaN enhanced effect transistor are small; and therefore, the device is particularly suitable for developing a GaN logic circuit.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA
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