Oxide semiconductor thin film and thin film transistor prepared from same

A technology of oxide semiconductors and oxides, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limited stability improvement, increased complexity, and application field limitations, and achieve excellent light stability, The effect of simple preparation process and strong applicability

Active Publication Date: 2017-09-08
深圳庸行科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method can only improve the photoresponse characteristics of the device to a certain extent, and the stability improvement under long-term light conditions is limited

Method used

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  • Oxide semiconductor thin film and thin film transistor prepared from same
  • Oxide semiconductor thin film and thin film transistor prepared from same
  • Oxide semiconductor thin film and thin film transistor prepared from same

Examples

Experimental program
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Embodiment 1

[0029] An oxide semiconductor film in this embodiment, the oxide semiconductor film is: a small amount of praseodymium oxide is doped into the indium zinc oxide semiconductor film by ceramic target magnetron sputtering as a light stabilizer to form a praseodymium oxide-doped oxide film. Indium zinc (Pr:IZO) semiconductor thin film material, wherein, Pr:In:Zn=0.2:5:1mol. The thickness of Pr:IZO semiconductor film is 20nm, and the carrier concentration is less than 5×10 19 cm -3 .

Embodiment 2

[0031] An oxide semiconductor film in this embodiment, the oxide semiconductor film is: a small amount of terbium oxide is doped into the indium gallium zinc oxide semiconductor film by ceramic target magnetron sputtering as a light stabilizer to form a terbium oxide doped Indium Gallium Zinc Oxide (Tb:IGZO) semiconductor thin film material, wherein Tb:In:Ga:Zn=0.1:1:1:0.5mol. The thickness of Tb:IGZO semiconductor film is 40nm, and the carrier concentration is less than 5×10 19 cm -3 .

Embodiment 3

[0033] An oxide semiconductor film in this embodiment, the oxide semiconductor film is: a small amount of thulium oxide is doped into the indium tin zinc oxide semiconductor film by atomic layer deposition as a light stabilizer to form thulium oxide doped indium tin oxide Zinc (Dy:ITZO) semiconductor thin film material, wherein Dy:In:Sn:Zn=0.1:1:1:1mol. Dy:ITZO semiconductor thin film has a thickness of 30nm and a carrier concentration of less than 5×10 19 cm -3 .

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Abstract

The invention belongs to the technical field of a semiconductor material and device, and discloses an oxide semiconductor thin film and a thin film transistor prepared from the same. The oxide semiconductor thin film is obtained by doping a few amount of rare-earth oxide into a metal oxide semiconductor thin film. The thin film transistor comprises a grid, a channel layer, a grid insulation layer, a source and a drain, wherein the channel layer is prepared from the oxide semiconductor thin film, the grid insulation layer is arranged between the grid and channel layer, and the source and the drain are respectively connected to two ends of the channel layer. The oxide semiconductor thin film material and the thin film transistor prepared from the same have very excellent illumination stability, and moreover, the oxide semiconductor thin film material and the thin film transistor prepared from the same are simple in preparation process and high in applicability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and devices, and in particular relates to an oxide semiconductor thin film and a thin film transistor prepared therefrom. Background technique [0002] The core technology of the new flat panel display (FPD, Flat Panel Display) industry is the thin film transistor (TFT, Thin Film Transistor) backplane technology. Metal oxide TFT (MO-TFT, Metal Oxide-TFT) not only has a high mobility (at 1 ~ 100cm 2 / (V·s)), and the manufacturing process is relatively simple, compatible with the current a-Si process, the manufacturing cost is low, and it also has excellent large-area uniformity. Therefore, MO-TFT technology has attracted the attention of the industry since its birth. [0003] As we all know, thin-film transistors, which are the core components of display devices, will inevitably be irradiated by light in the application of the display field; however, due to the existence of oxygen...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336H01L29/12
CPCH01L29/12H01L29/66742H01L29/7869H01L29/66969H01L21/02581H01L21/02565H01L21/02554H01L21/02422H01L21/02488H01L21/02631H01L21/30604H01L21/02266H01L29/78693
Inventor 徐苗徐华吴为敬陈为峰王磊彭俊彪
Owner 深圳庸行科技有限公司
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