Thin-film encapsulation structure of top light-emitting OLED device and preparing method thereof

Abstract

The invention discloses a thin-film encapsulation structure of a top light-emitting OLED device. The thin-film encapsulation structure of the top light-emitting OLED device comprises a substrate, a reflecting anode, a hole transporting layer, a light-emitting layer, an electron transporting layer, a semi-transparent cathode and a thin-film encapsulation layer, wherein the reflecting anode, the hole transporting layer, the light-emitting layer, the electron transporting layer, the semi-transparent cathode and the thin-film encapsulation layer are sequentially stacked up on the substrate. The thin-film encapsulation structure of the top light-emitting OLED device further comprises an encapsulation buffering layer arranged between the semi-transparent cathode and the thin-film encapsulation layer, and the encapsulation buffering layer is a layer of organic small-molecule fluorescence-like light-emitting material which is 1-10mm in thickness and emits red light, green light, blue light or yellow light. The invention further discloses a preparing method of the thin-film encapsulation structure. On the one hand, the encapsulation buffering layer absorbs light of a first spectrum from a light-emitting layer of the top light-emitting OLED device and emits light of a second spectrum, and therefore high color purity of the device is ensured; on the other hand, damages to an electrode and the light-emitting layer by plasma and sputtering particles when thin film encapsulation is performed are reduced, and yield is enhanced. The thin-film encapsulation structure of the top light-emitting OLED device and the preparing method of the thin-film encapsulation structure are simple in principle, convenient to operate and convenient to popularize and use in the industry.

Description

technical field [0001] The invention belongs to the field of displays, and in particular relates to a thin-film packaging structure of a top-emitting OLED device and a preparation method thereof. Background technique [0002] OLED has the characteristics of active light emission, low voltage demand, and power saving. In addition, it has the advantages of fast response, light weight, thin thickness, simple structure, and low cost. It has the incomparable advantages of LCD and is gradually entering the mainstream display market. [0003] In current OLED devices, the white light is generally obtained by mixing two primary colors or three primary colors. Generally, multiple emissive layers (multiple emissive layers) and multiple doped emissive layers (multiple dopants emissive layers) structures are used. The contact interface, contact barrier, and luminescence attenuation between the various light-emitting layers are different, resulting in a significant attenuation of device e...

AI Technical Summary

Problems solved by technology

[0003] In current OLED devices, the white light is generally obtained by mixing two primary colors or three primary colors. Generally, multiple emissive layers (multiple emissive layers) and multiple doped emissive layers (multiple dopants emissive layers) structures are used. The contact interface, contact barrier, and luminescence attenuation between each light-emitting layer are different, resulting in a significant attenuation of device efficiency and lifetime.

[0004] There are many kinds of thin film packaging, and physical deposition methods such as ion chemical vapor deposition (PECVD) and sputtering coating are currently used more often. On the one hand, their preparation process temperature is relatively high, which is higher than the tolerance range of OLED devices; on the other hand, Plasma and sputtered particles have very large damage to organic materials or metal electrodes, and the current packaging technology cannot solve this problem for the time being

Images