Thin-film encapsulation structure of top light-emitting OLED device and preparing method thereof

A thin-film packaging and top-emitting technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problem of luminous attenuation device efficiency and life attenuation, higher than the tolerance range of OLED devices, organic materials or metal electrode damage and other problems, to achieve the effects of simplifying the production process, facilitating popularization and use, and convenient operation

Inactive Publication Date: 2013-08-21
SICHUAN CCO DISPLAY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In current OLED devices, the white light is generally obtained by mixing two primary colors or three primary colors. Generally, multiple emissive layers (multiple emissive layers) and multiple doped emissive layers (multiple dopants emissive layers) structures are used. The contact interface, contact barrier, and luminescence attenuation between each light-emitting layer are different, resulting in a significant attenuation of device efficiency and lifetime.
[0004] There are many

Method used

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  • Thin-film encapsulation structure of top light-emitting OLED device and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0028] Example 1

[0029] The thin film packaging structure of the top-emitting OLED device in this embodiment, such as figure 1 Said, comprising a substrate 1 and a reflective anode 2, a hole transport layer 3, a light-emitting layer 4, an electron transport layer 5, a semi-transparent cathode 6 and a thin film encapsulation layer 8, which are sequentially superimposed on the substrate 1, and an encapsulation buffer layer 7, The packaging buffer layer 7 is arranged between the semi-transparent cathode 6 and the thin film packaging layer 8.

[0030] Among them, the encapsulation buffer layer 7 is a fluorescent material with a thickness of 1 nm and emitting red light, such as coumarin, aromatic compounds and their derivatives.

[0031] The method for preparing the thin film packaging structure of the top-emitting OLED device of this embodiment includes the following steps:

[0032] In step 1, the reflective anode 2, the hole transport layer 3, the light emitting layer 4, the electron ...

Example Embodiment

[0037] Example 2

[0038] The thin film packaging structure of the top-emitting OLED device in this embodiment is the same as that of Embodiment 1, as figure 1 Shown.

[0039] The encapsulation buffer layer 7 of the thin-film encapsulation structure of the top-emitting OLED device is a fluorescent luminescent material with a thickness of 3 nm and emitting green light, such as coumarin derivatives, quinacridones and their derivatives, and polycyclic aromatic hydrocarbons. Compounds and their derivatives, 1H-pyrazolo[3,4-b]quinoxaline green fluorescent dopants.

[0040] The method for preparing the thin film packaging structure of the top-emitting OLED device of this embodiment includes the following steps:

[0041] In step 1, the reflective anode 2, the hole transport layer 3, the light emitting layer 4, the electron transport layer 5, and the semi-transparent cathode 6 are sequentially prepared on the substrate 1 by a thermal evaporation method;

[0042] Step 2: Prepare the package bu...

Example Embodiment

[0046] Example 3

[0047] The thin film packaging structure of the top-emitting OLED device in this embodiment is the same as that of the first embodiment, such as figure 1 Shown.

[0048] The packaging buffer layer 7 of the thin-film packaging structure of the top-emitting OLED device is a fluorescent light-emitting material with a thickness of 6 nm and emitting blue light, such as TBP, TPP, DSA, DSA-Ph, BD-1, BD-2, BD-3 .

[0049] The method for preparing the thin film packaging structure of the top-emitting OLED device includes the following steps:

[0050] In step 1, the reflective anode 2, the hole transport layer 3, the light emitting layer 4, the electron transport layer 5, and the semi-transparent cathode 6 are sequentially prepared on the substrate 1 by a thermal evaporation method;

[0051] Step 2: Prepare the package buffer layer 7 by thermal evaporation method on the plated translucent cathode 6;

[0052] Step 3 prepare a polymer film encapsulation layer on the encapsulatio...

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Abstract

The invention discloses a thin-film encapsulation structure of a top light-emitting OLED device. The thin-film encapsulation structure of the top light-emitting OLED device comprises a substrate, a reflecting anode, a hole transporting layer, a light-emitting layer, an electron transporting layer, a semi-transparent cathode and a thin-film encapsulation layer, wherein the reflecting anode, the hole transporting layer, the light-emitting layer, the electron transporting layer, the semi-transparent cathode and the thin-film encapsulation layer are sequentially stacked up on the substrate. The thin-film encapsulation structure of the top light-emitting OLED device further comprises an encapsulation buffering layer arranged between the semi-transparent cathode and the thin-film encapsulation layer, and the encapsulation buffering layer is a layer of organic small-molecule fluorescence-like light-emitting material which is 1-10mm in thickness and emits red light, green light, blue light or yellow light. The invention further discloses a preparing method of the thin-film encapsulation structure. On the one hand, the encapsulation buffering layer absorbs light of a first spectrum from a light-emitting layer of the top light-emitting OLED device and emits light of a second spectrum, and therefore high color purity of the device is ensured; on the other hand, damages to an electrode and the light-emitting layer by plasma and sputtering particles when thin film encapsulation is performed are reduced, and yield is enhanced. The thin-film encapsulation structure of the top light-emitting OLED device and the preparing method of the thin-film encapsulation structure are simple in principle, convenient to operate and convenient to popularize and use in the industry.

Description

technical field [0001] The invention belongs to the field of displays, and in particular relates to a thin-film packaging structure of a top-emitting OLED device and a preparation method thereof. Background technique [0002] OLED has the characteristics of active light emission, low voltage demand, and power saving. In addition, it has the advantages of fast response, light weight, thin thickness, simple structure, and low cost. It has the incomparable advantages of LCD and is gradually entering the mainstream display market. [0003] In current OLED devices, the white light is generally obtained by mixing two primary colors or three primary colors. Generally, multiple emissive layers (multiple emissive layers) and multiple doped emissive layers (multiple dopants emissive layers) structures are used. The contact interface, contact barrier, and luminescence attenuation between the various light-emitting layers are different, resulting in a significant attenuation of device e...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/52H01L51/56
Inventor 高娟高昕伟唐凡邹成陈珉
Owner SICHUAN CCO DISPLAY TECH
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