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Method for improving field emission performance of material

A field emission and performance technology, which is used in the manufacture of discharge tubes/lamps, laser welding equipment, electrical components, etc. The effect of electron emission performance, low cost and simple operation

Inactive Publication Date: 2013-08-28
DONGHUA UNIV
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  • Description
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Problems solved by technology

The field emission performance of field emission cathode materials without any processing is generally not ideal, mainly because of high turn-on voltage, small emission current, and unstable current.

Method used

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  • Method for improving field emission performance of material
  • Method for improving field emission performance of material
  • Method for improving field emission performance of material

Examples

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Effect test

Embodiment 1

[0015] A method for improving the field emission performance of materials, the specific steps are: make a dot matrix image in the corresponding computer software of the laser marking machine, and set the power density of the laser marking machine to 2W / cm 2 , using a carbon dioxide laser with a marking speed of 300 mm / s, using the laser marking machine to perform laser treatment on the surface of the carbon film material of the field emission cathode material for 9 seconds by using a scanning processing method to form a regular micro-nano structure, such as figure 1 So not.

[0016] The carbon thin film material that has not been treated by the above method and the carbon thin film material that have been treated by the method of topping are tested for field emission performance. With a field emission instrument, the current change is observed by applying a voltage after vacuuming. The field emission vacuum degree is 2×10 -5 Pa, figure 2 It is the field emission rendering of...

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Abstract

The invention provides a method for improving field emission performance of a material. The method is characterized by including the following steps: making a lattice image in corresponding computer software in a laser marking machine, setting power density of the laser marking machine and utilizing the laser marking machine to conduct laser processing on the surface of a field emission cathode material. A laser scanning type processing method is utilized to process the surface of the cathode material, regular nanometer-sized small holes identical in size are formed in the surface of the cathode material, and defect points and ablation organics are increased to increase field emission current and improve stability. Field emission starting voltage is reduced, field emission evenness is improved, meanwhile a regular micronano structure is formed on the surface of the processed material, distances between pixel points are reduced to about 1 micrometer, the size is shrunk by nearly 100 times compared with the existing size, and the number of the pixel points of a display in the same size can be increased by nearly 100 times to achieve ultrahigh resolution display.

Description

technical field [0001] The invention relates to a method for improving the performance of field electron emission, which can effectively improve the field emission performance of materials, realize the processing of regular micro-nano structures on the surface of materials, and further realize ultra-high resolution display. Background technique [0002] Cold cathode field electron emission is to reduce the barrier height and narrow the width by applying an external voltage, resulting in the emission of electrons without energy loss. If the field emission is applied to the display, the cold electron emission technology is of great benefit to the improvement of the life of the display. Laser micro-nano processing is an effective and high-precision processing technology, which can provide technology and means for the research and preparation of functionalized optical microstructures, which makes laser processing in optical waveguides, photonic crystals, diffraction gratings, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K26/00H01J9/02B23K26/352
Inventor 吴淑贤薛绍林
Owner DONGHUA UNIV
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