Method for preparing supersaturated-doping semiconductor thin film
A semiconductor and thin film technology, which is applied in the field of supersaturated doped semiconductor thin film preparation, can solve problems such as inhomogeneity, unfavorable device production and performance, and uneven distribution of sulfur atom concentration, so as to achieve favorable device performance and uniform doping concentration. Effect
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[0012] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0013] The invention provides a method for preparing a supersaturated doped semiconductor thin film.
[0014] figure 1 The flow chart of the preparation method of the supersaturated doped semiconductor thin film proposed by the present invention is shown. Such as figure 1 As shown, the method includes the following steps:
[0015] Step 1: Select a substrate. The material of the substrate can be various types of semiconductor substrates. In this example, a silicon single wafer is selected, and its crystal plane orientation is (001), and both sides are polished, p-type boron doped, and the resistivity between 1~10Ωcm, the thickness of wafer is 390±20μm;
[0016] Step 2: Rotate and clean the substrate three times in tric...
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