Method for preparing petal-like nickel-oxide-doped stannic oxide
A technology of tin dioxide and nickel oxide, applied in the direction of tin oxide, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problems of complex process, difficult microstructure, high cost, etc., and achieve large specific surface area and easy operation simple effect
Active Publication Date: 2014-09-17
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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However, these methods are complex in process, difficult to control the microstructure, and high in cost.
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[0023] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0024] Preparation of petal-shaped SnO provided by the invention 2 / NiO method, first use stannous chloride dihydrate, nickel acetate, oxalic acid, hydrazine and water as raw materials, after stirring, hydrothermal reaction, centrifugation, washing and drying, etc., to obtain petal-shaped SnO 2 / NiO precursor; then after high temperature calcination and cooling, the petal-shaped SnO can be obtained 2 Powder doped with NiO.
[0025] Such as figure 1 as shown, figure 1 It is the preparation of petal-shaped SnO according to the embodiment of the present invention 2 / NiO method flowchart, the method comprises the following steps:
[0026] Step 1: Mixing process: dissolving tin dichloride dihydrate, nickel acetate, and ox...
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The invention discloses a method for preparing petal-like nickel-oxide-doped stannic oxide. The method comprises the following steps of: mixing, namely, dissolving dihydrate stannic oxide, nickel acetate and oxalic acid in water, adding hydrazine hydrate with the mass fraction of 80% and 3-4 drops of HCl, and stirring the solution for 3-4 hours under the magnetic stirring at the rotating speed of 10 turns / minute to 180 turns / minute to obtain muddy solution; reacting, namely, carrying out thermal reaction on the obtained muddy solution at 0-180 DEG C for 0.5-36 hours, and filtering, washing and drying the precipitates to obtain a precursor of the petal-like nickel-oxide-doped stannic oxide; and calcining, including calcining the obtained precursor of the petal-like nickel-oxide-doped stannic oxide at 300-1000 DEG C for 0.5-4 hours and carrying out natural cooling to be a room temperature. By using the method for doping in materials, materials can be easily obtained, the operation is simple; and the prepared product is petal-like without other shapes, and the specific surface area is large.
Description
technical field [0001] The invention relates to the technical field of preparation of tin-based compounds, in particular to a tin dioxide (SnO 2 / NiO) method. Background technique [0002] Gas sensors are used in a variety of applications, and semiconductor gas sensors are widely used because of their high sensitivity, fast response time, long service life and low cost. Tin dioxide (SnO 2 ) is a typical n-type semiconductor, and is the preferred material for gas sensors. It is mainly used for the detection of flammable gases such as ethanol, hydrogen and hydrogen sulfide, and is currently widely used in the gas sensor manufacturing industry. [0003] Regarding the detection mechanism of tin dioxide to gas, it is generally considered to be a surface adsorption-controlled mechanism, that is, in dry and clean air, when the sensitive film is heated to a certain temperature, the surface of the film adsorbs the gas to be measured and forms at the grain boundary of the material. ...
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IPC IPC(8): C01G19/02B82Y30/00B82Y40/00
Inventor 李冬梅詹爽梁圣法陈鑫谢常青刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI