Surface plasmon polariton waveguide with metal-insulator-semiconductor (MIS) capacitor structure
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- HUAZHONG UNIV OF SCI & TECH
- Publication Date
- 2013-09-04
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a Surface Plasmon Polariton (SPP) waveguide structure and device with a metal-insulator-semiconductor (Mental-Insulator-Semiconductor, MIS) capacitance structure, wherein the semiconductor layer and the insulating material are utilized under the action of an applied voltage The change of the complex dielectric function and its distribution of semiconductor materials near the layer interface can realize the switch of SPP wave transmission and the control of SPP field strength, and has potential applications in photonic integration, nonlinear optics and other fields. Background technique
[0002] The SPP wave is an electromagnetic wave guided at the interface between a conductor and a medium, which originates from the collective oscillation of free charges near the surface of the conductor caused by the excitation of an external electromagnetic field. The local enhancement effect brought by the unique generation mechanism of SPP ...