Surface plasmon polariton waveguide with metal-insulator-semiconductor (MIS) capacitor structure

A surface plasmon and capacitive structure technology, applied in light guides, optical components, nanotechnology, etc., can solve the problems of unfavorable device integration, reduction of metal layer thickness, and difficulty in compensation, etc., to enhance the local characteristics of the light field and improve The effect of integration and size reduction

CN103278884AInactive Publication Date: 2013-09-04HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
Publication Date
2013-09-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a surface plasmon polariton (SPP) waveguide with a metal-insulator-semiconductor (MIS) capacitor structure. The SPP waveguide consists of a metal layer (1), an insulating material layer (2), a doped semiconductor layer (3) and a substrate (4), which are arranged from top to bottom, wherein the substrate is grounded through a wire; the metal layer is connected with external voltage through a wire; under proper voltage, a negative real part epsilon r of a complex dielectric function is changed to be positive from an interface of the doped semiconductor layer (3) and the insulating material layer (2) to the interior of the doped semiconductor layer (3), and an area where the epsilon r is negative has characteristics similar to those of metal; an SPP mode can be supported on the interface of the doped semiconductor layer (3) and the insulating material layer (2) and an interface of the positive epsilon r and the negative epsilon r; and the SPP mode supported on the interface of the positive epsilon r and the negative epsilon r is coupled with an SPP mode supported by an interface of the metal layer (1) and the insulating material layer (2) to form a hybrid SPP mode. According to the SPP waveguide, the controllability of a semiconductor can be used for conveniently and efficiently realizing SPP wave regulation and solving a conflict between light field limit and loss.
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Description

technical field

[0001] The invention relates to a Surface Plasmon Polariton (SPP) waveguide structure and device with a metal-insulator-semiconductor (Mental-Insulator-Semiconductor, MIS) capacitance structure, wherein the semiconductor layer and the insulating material are utilized under the action of an applied voltage The change of the complex dielectric function and its distribution of semiconductor materials near the layer interface can realize the switch of SPP wave transmission and the control of SPP field strength, and has potential applications in photonic integration, nonlinear optics and other fields. Background technique

[0002] The SPP wave is an electromagnetic wave guided at the interface between a conductor and a medium, which originates from the collective oscillation of free charges near the surface of the conductor caused by the excitation of an external electromagnetic field. The local enhancement effect brought by the unique generation mechanism of SPP ...

Examples

Embodiment 1

[0035] The SPP waveguide of embodiment 1.MIS capacitor structure

[0036] see figure 1 , the SPP waveguide is composed of a metal layer 1 , an insulating material layer 2 , a doped semiconductor layer 3 and a substrate 4 arranged from top to bottom.

[0037] The metal layer 1 can be a silver (Ag) layer.

[0038] The insulating material layer 2 can adopt zirconium dioxide (ZrO 2 )Floor.

[0039] The doped semiconductor layer 3 can use In which is lattice-matched with InP. 0.53 Ga 0.47 As semiconductor layer. The thickness of the doped semiconductor layer should be at least greater than 35nm to ensure that positive and negative ε can appear near the interface of the semiconductor layer r interface.

[0040] The substrate 4 may be an InP substrate.

[0041] The selection of the material and thickness of the insulating material layer has a decisive effect on the realization of the device characteristics. When the dielectric constant of the insulating material is low, the c...

Embodiment 2

[0042] Embodiment 2. is used for the SPP waveguide of the MIS capacitive structure of 1550nm optical communication band (photon energy is about 0.8eV)

[0043] see figure 1 , the SPP waveguide is composed of a metal layer 1, an insulating material layer 2, a doped semiconductor layer 3 and a substrate 4 arranged from top to bottom, wherein:

[0044] The metal layer 1 can be silver (Ag) with a thickness of 100nm.

[0045] The insulating material layer 2 can adopt zirconium dioxide (ZrO2) with a thickness of 10 nm. 2 ).

[0046] The doped semiconductor layer 3 can use In which is lattice-matched with InP. 0.53 Ga 0.47 As, the thickness is 50nm, the doping concentration is 1×10 19 cm -3 , using N-type doping. where In 0.53 Ga 0.47 The selection of As doping concentration takes into account the intrinsic In 0.53 Ga 0.47 As material has the problem of intrinsic absorption in the optical communication window (~0.8eV). In 0.53 Ga 0.47 The direct bandgap of As is 0.74eV,...