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A method for fabricating a stable high-temperature-resistant hydrogen-terminated conductive channel on a diamond surface

A surface fabrication, conductive channel technology, used in circuits, electrical components, semiconductor/solid-state device manufacturing, etc., can solve the problems of p-type channel failure, large environmental impact, poor thermal stability, etc., to achieve the effect of normal operation

Active Publication Date: 2016-01-20
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the adsorption layer that provides acceptors near the surface is mainly provided by the air in the environment, this near-surface system is greatly affected by the environment and is vulnerable to damage, especially when working at high temperatures, polar molecules will be desorbed, and thus The diamond near the surface escapes, causing the p-type channel to fail
At the same time, when working in a high-temperature aerobic environment, the adsorption layer and hydrogen end groups on the surface are also easily damaged and decomposed, which will affect the chemical and thermal stability of the channel, and also limit the application of diamond devices.
The advantages of diamond itself are excellent thermal conductivity, high temperature resistance and radiation resistance. When it is used to make high temperature resistant devices, the short board of p-channel thermal stability just limits the diamond device to play its full potential. own advantages

Method used

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  • A method for fabricating a stable high-temperature-resistant hydrogen-terminated conductive channel on a diamond surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1: (1) A high-resistance diamond of 300 μm was grown on a molybdenum substrate by microwave plasma chemical vapor deposition;

[0026] (2) Form a p-type conductive channel on the high-resistance diamond material by hydrogen plasma treatment for 30 minutes;

[0027] (3) The hydrogen-terminated diamond obtained after treatment is placed in a chemical vapor deposition equipment and vacuumed to 10 -4 mbar, then into NH 3 and H 2 mixture of which NH 3 The flow rate is 500mL / min, H 2 The flow rate is 20L / min, the reaction chamber pressure is 100mbar, and the treatment time is 1 hour.

[0028] (4) After taking out the sample, deposit 3nm HfO in the atomic layer deposition equipment at room temperature 2 The dielectric barrier layer prevents the surface of the hydrogen-terminated diamond adsorbed with polar molecules and functional groups from being directly exposed to the environment.

Embodiment 2

[0029] Example 2: (1) A high-resistance diamond of 300 μm was grown on a molybdenum substrate by a direct current arc method;

[0030] (2) Form a p-type conductive channel on the high-resistance diamond material by hydrogen plasma treatment for 30 minutes;

[0031] (3) Soak the hydrogen-terminated diamond obtained after treatment in trimellitic anhydride TMA for 30 minutes;

[0032] (4) After taking out the sample, deposit 3nm Al in the atomic layer deposition equipment at room temperature 2 o 3 The dielectric barrier layer prevents the surface of the hydrogen-terminated diamond adsorbed with polar molecules and functional groups from being directly exposed to the environment.

[0033] When this hydrogen-terminated diamond is exposed to an atmosphere of polar molecules, it will adsorb the polar molecules and form an electrochemical system. In this system, the electronegativity of the C-H dipole is 1.3eV, and the valence band is higher than The chemical potential of adsorbed...

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Abstract

The invention discloses a method for manufacturing a stable high temperature-resistant hydrogen end group conducting channel on a diamond surface. The method comprises the steps of 1, forming a high-resistance diamond layer on a substrate; 2, processing the upper surface of the high-resistance diamond layer to form a hydrogen end group diamond; 3, placing the sample into a gas, solution or collosol containing polar molecules for processing to enable hydrogen end groups in the hydrogen end group diamond to fully adsorb the polar molecules or functional group in the gas, solution or collosol containing polar molecules, thus forming a p type conducting channel at the 10-20nm position of the lower surface of the hydrogen end group diamond and forming a polar molecule adsorbed layer on the upper surface of the hydrogen end group diamond; and 4, taking the sample out to obtain a dielectric barrier layer by depositing at normal temperature. The method can enable the concentration and migration rate of carriers in the p type diamond material channel to be stable in the range of 20-500 DEG C, and further realizing the normal work of a diamond element at high temperature.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing methods. Background technique [0002] Diamond material has excellent mechanical, optical and acoustic properties, and as a wide bandgap semiconductor material, it has a bandgap width of 5.5eV, high thermal conductivity, high breakdown and high breakdown field strength (>10MV / cm), stable chemical properties and strong radiation resistance, which make it an ideal material for high-frequency, high-power, radiation-resistant, high-temperature-resistant and corrosion-resistant electronic devices. [0003] One of the necessary conditions for making semiconductor devices is to realize an effective conductive channel on the high-resistance diamond material. One of the current methods for making efficient p-type conductive channels is to use surface treatment to form hydrogen-terminated diamonds covered by C-H bonds on the diamond surface, and use C-H bonds to interact with...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
Inventor 王晶晶冯志红何泽召蔚翠
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP