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Copper-platinum alloy wire for connecting in semiconductor apparatus

A platinum alloy and semiconductor technology, which is applied in the field of copper-platinum alloy wire, can solve instability and other problems, and achieve the effect of preventing chip cracking and not improving dynamic strength

Active Publication Date: 2013-09-11
TANAKA DENSHI KOGYO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, since various oxide films are formed when the cleaned copper alloy wire surface is heat-treated as a post-treatment or left in the atmosphere, the problem of an unstable oxide film on the copper alloy wire surface remains unsolved.

Method used

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  • Copper-platinum alloy wire for connecting in semiconductor apparatus
  • Copper-platinum alloy wire for connecting in semiconductor apparatus
  • Copper-platinum alloy wire for connecting in semiconductor apparatus

Examples

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Embodiment Construction

[0054] As Examples 1 to 30 and Comparative Examples 1 to 6, copper alloy thick wires each having a diameter of 5 mm were produced by melting alloys of the compositions shown in Table 1 and performing continuous casting.

[0055] By the surface of the copper-platinum alloy thick wire of embodiment 1, measure platinum (Pt) and copper (Cu) by SIMS mass spectrometer respectively ( figure 1 ) and the concentration of oxygen (O). The horizontal axis of the graph represents the depth (μm) from the surface of the thick line, and the vertical axis represents the relative secondary ion intensity (log) of the depth.

[0056] according to figure 1 , platinum (Pt) is absent on the surface layer, and up to 50 nm, platinum (Pt) has a lower relative secondary ionic strength than the solid solution matrix. In contrast, it is apparent that copper (Cu) has a significantly higher purity near the surface.

[0057] according to figure 2 , oxygen (O) decreases linearly from the surface layer ...

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Abstract

The invention relates to a copper-platinum alloy wire for connecting in a semiconductor apparatus. The copper-platinum alloy wire can improve a secondary joining property, prevent chip crack in ball bonding and improve ring formation performance in copper wires for the ball bonding. During preparing element wires of continuous casting of a fusing copper-platinum alloy containing high-purity copper (Cu), by mass, 0.1-2.0 % of platinum (Pt), 1-10 ppm sulphur (S) as a non-metal element, 10-150 ppm oxygen (O), optionally together with 1-5 ppm phosphorus (P), a very thin copper layer without the platinum is formed because of segregation, is subsequently oxidized in the atmosphere and a 6-2 nm oxide film is formed on a surface layer of the wires after continuous wire drawing is carried out. According to the joining wires of 77-105 Hv Vickers hardness, the uniform oxide film improves the secondary joining property, the elements added to a matrix restrain dynamic strength during ball bonding, so that aluminum splash is prevented and static strength incapable of leading to inclination is maintained.

Description

technical field [0001] The present invention relates to a copper alloy wire for connecting a pad electrode and an external electrode on a semiconductor element to each other by ultrasonic-assisted thermocompression bonding, and in particular, to a copper-platinum alloy wire in which a small amount of platinum (Pt) Dissolved in a matrix rich in copper (Cu) with a purity of 99.995% by mass or higher. Background technique [0002] With the recent rise in gold prices, copper alloy wires are attracting attention again as a substitute for the 4N gold alloy wires that have been used hitherto. [0003] In the conventional ultrasonic-assisted thermocompression bonding employed for conventional copper alloy wires, the copper alloy bonding wire is heated by an arc while being held on an aluminum disk under a non-oxidizing atmosphere such as a nitrogen atmosphere and a hydrogen-mixed nitrogen atmosphere. Input heat and melt the end of the wire, form a ball by surface tension, and then ...

Claims

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Application Information

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IPC IPC(8): H01L23/49C22C9/00
CPCH01L24/43H01L2224/05624H01L2224/43H01L2224/43848H01L2224/45H01L2224/45015H01L2224/45144H01L2224/45147H01L2224/45565H01L2224/45644H01L2224/45664H01L2224/48463H01L2224/48824H01L2924/00011H01L2924/00014H01L2924/01015H01L2924/01078H01L2924/01016H01L2924/01008H01L2924/01204H01L2924/013H01L2924/00H01L2224/48H01L2924/20108H01L2924/20109H01L2924/2011H01L2924/20111H01L2924/20751H01L2924/01029H01L2924/00013H01L2924/01083H01L2924/00012H01L2924/01004
Inventor 天野裕之三上道孝冈崎纯一滨本拓也中岛伸一郎山下勉三苫修一小野甲介刘斌执行裕之
Owner TANAKA DENSHI KOGYO
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