A bipolar transistor with improved bvcbo and its production process

Abstract

The invention discloses a bipolar transistor with improved break voltage of collector-based open emitter (BVcbc) and a production process thereof. The groove field oxidation isolation technology is combined with the junction terminal technology, the groove field oxidation process is divided into two steps, junction terminal boron ion implantation is performed between the two field oxidation steps, and therefore the reasonable junction terminal boron junction depth can be obtained and the technological process is simplified. A junction terminal boron ion implantation window is not needed to be aligned with the groove edge so that the fixed boron doping concentration can be obtained at the junction position of junction terminals and a groove, and the stable BVcbc can be obtained. The BVcbc of NPN silicon bipolar microwave power transistor devices produced through the production process is improved to be above 20V, high output power can be provided, collector junction stray capacitance is reduced, and the device high-frequency performance is ensured.

Description

Technical field [0001] The invention relates to a bipolar transistor with improved BVcbo (collector-base breakdown voltage) and a production process thereof, and belongs to the field of electronic technology. Background technique [0002] High frequency power transistor devices are widely used in communication systems and radar systems. The application design of microwave power transistor devices requires high output power and high gain, and the operating frequency ranges from several hundred MHz to several GHz. In order to achieve such high output power, high gain, and high frequency requirements, in addition to optimizing the layout of the chip device, the selection of process parameters, and the packaging, the improvement of the transistor chip production process is sometimes more important. The reasons are as follows: [0003] 1. In order to obtain high output power, the highest possible doping concentration of the collector should be selected to suppress the saturation of the...

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Problems solved by technology

But the problem with denser collector doping is lower BVcbo

[0004] 2. In order to obtain high-frequency performance, the base junction depth of planar transistors is generally shallow (0.2 to 0.5 microns), and the shallower base junction depth makes the metallurgical junction radius of collector-base smaller, so that in the collector When the electric region-base region is applied with a reverse bias voltage, the electric field tends to be concentrated at a smaller radius of curvature, resulting in a smaller BVcbo

However, the problem caused by the junction termination technology is that due to the lateral diffusion of impurities, the area of ​​the transistor increases, resulting in an increase in the parasitic capacitance of the collector-base region, which reduces the frequency performance of the transistor.

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