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Light-emitting diode epitaxial wafer and manufacturing method thereof

A technology for light-emitting diodes and epitaxial wafers, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing hole injection efficiency, low radiation recombination efficiency of multiple quantum well regions, and reducing luminous efficiency of light-emitting diodes, etc., to promote radiation Effects of recombination efficiency, improved luminous efficiency, and improved injection efficiency

Active Publication Date: 2017-07-25
HC SEMITEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In the existing light-emitting diode epitaxial wafers, the injection of holes at different dispersed energy levels in the p-type layer into the multi-quantum well layer has randomness, which reduces the injection efficiency of holes, resulting in relatively low radiative recombination efficiency in the multi-quantum well region. low, reducing the luminous efficiency of LEDs

Method used

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  • Light-emitting diode epitaxial wafer and manufacturing method thereof
  • Light-emitting diode epitaxial wafer and manufacturing method thereof
  • Light-emitting diode epitaxial wafer and manufacturing method thereof

Examples

Experimental program
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Embodiment 1

[0029] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 1 , the epitaxial wafer comprises: a substrate 11, a buffer layer 12, an n-type layer 13, a multi-quantum well layer 14, a hole injection layer 15 and a p-type layer 17, which are sequentially grown upward on the substrate 11, and the multi-quantum well layer 14 includes several quantum barrier layers 141 and several quantum well layers 142, the quantum barrier layers 141 and the quantum well layers 142 grow alternately, and the forbidden band width of the hole injection layer 15 is larger than that of the multi-quantum well layer 14 closest to the hole injection layer. The forbidden band width of quantum well layer 142 of layer 15.

[0030] Wherein, the forbidden band width refers to an energy band width, and its unit is electron volt (ev). The energy levels of electrons in solids are discontinuously distributed, thus forming some discontinuous energy bands. The energy b...

Embodiment 2

[0035] An embodiment of the present invention provides a light emitting diode epitaxial wafer, see figure 2 , the epitaxial wafer includes:

[0036] Substrate 21, a buffer layer 22, an n-type layer 23, a multi-quantum well layer 24, a hole injection layer 25 and a p-type layer 27 that are grown upwards sequentially on the substrate 21, and the multi-quantum well layer 24 includes several quantum barrier layers 241 and several quantum well layers 242, the quantum barrier layers 241 and the quantum well layers 242 grow alternately, the forbidden band width of the hole injection layer 25 is larger than the quantum well layer 242 closest to the hole injection layer 25 in the multi-quantum well layer 24 The forbidden band width.

[0037] Optionally, the substrate 21 may be a sapphire substrate.

[0038] Optionally, the buffer layer 22 may be a composite layer, which may include a GaN low-temperature buffer layer and an undoped GaN layer.

[0039] Optionally, the n-type layer 23...

Embodiment 3

[0052] An embodiment of the present invention provides a method for manufacturing a light-emitting diode epitaxial wafer, which can be used to manufacture the epitaxial wafers in Embodiment 1 and Embodiment 2, see image 3 , the method includes:

[0053] Step 301: providing a substrate, and sequentially growing a buffer layer and an n-type layer on the substrate.

[0054] Step 302: growing multiple quantum well layers on the n-type layer, the multiple quantum well layers include several quantum barrier layers and several quantum well layers, and the quantum barrier layers and quantum well layers are grown alternately.

[0055] Step 303: growing a hole injection layer on the multiple quantum well layer.

[0056] Wherein, the band gap of the hole injection layer is greater than that of the quantum well layer closest to the hole injection layer among the multiple quantum well layers, and the band gap of the hole injection layer is smaller than that of the electron blocking layer...

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Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The epitaxial wafer includes: a substrate, a buffer layer grown sequentially upward on the substrate, an n-type layer, a multi-quantum well layer and a p-type layer. The multi-quantum well layer includes several quantum barrier layers and several quantum well layers. Barrier layers and quantum well layers grow alternately, and the epitaxial wafer also includes a hole injection layer arranged between the multi-quantum well layer and the p-type layer. The forbidden band width of the hole injection layer is larger than that of the nearest hole in the multi-quantum well layer. The forbidden band width of the quantum well layer of the injection layer. The present invention forms a potential well between the multi-quantum well layer and the p-type layer by setting the hole injection layer, and the potential well can gather the holes injected from the p-type layer into the multi-quantum well layer, and then under the action of the applied voltage Under this condition, the accumulated holes are injected into the multi-quantum well layer, thereby improving the hole injection efficiency, promoting the radiative recombination efficiency of electrons and holes, and improving the luminous efficiency of the epitaxial wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Semiconductor light-emitting diode is a light-emitting device that converts electrical energy into light energy, and is widely used in people's daily life. The light-emitting diode chip is a semiconductor crystal, which is the core component of the light-emitting diode. Wherein, the LED chip generally includes an epitaxial wafer and electrodes disposed on the epitaxial wafer. [0003] The epitaxial wafer generally includes a substrate, a buffer layer stacked sequentially on the substrate, an n-type layer, a multi-quantum well layer and a p-type layer, wherein the multi-quantum well layer includes several quantum barrier layers and several quantum well layers, and the quantum Barrier layers and quantum well layers are grown alternately. [0004] In the process of real...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
Inventor 王明军魏世祯胡加辉
Owner HC SEMITEK CORP