Photoresist resin composition

A technology of photoresist and resin composition, which is applied in the direction of optics, optomechanical equipment, instruments, etc., can solve the problems of reduced sensitivity of resist film, reduced residual film rate, and reduced development contrast, achieving good sensitivity, The effect of high residual film

Inactive Publication Date: 2013-09-25
SUMITOMO BAKELITE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has a problem that the heat resistance of the resist film is lowered or the residual film rate of the unexposed part is lowered.
In addition, in this method, since the difference in dissolution rate between the exposed portion and the unexposed portion is not sufficiently obtained, the development contrast between the exposed portion and the unexposed portion decreases, and as a result, there is a problem that the resolution is lowered.
On the other hand, if the molecular weight of the novolac resin is increased, the heat resistance and resolution of the resist film are improved, but the sensiti...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0037] The preparation method of the composition according to the embodiment of the present invention is not particularly limited, and when fillers and pigments are not added to the composition, the above-mentioned components may be mixed and stirred by a usual method, and when fillers and pigments are added , For example, dispersion and mixing may be performed using a dispersing device such as a dissolver, a homogenizer, or a three-roll mill. Moreover, you may further perform filtration using a mesh filter, a membrane filter, etc. as needed.

[0038] By exposing the thus obtained composition according to the embodiment of the present invention through a mask, the structure of the composition is changed in the exposed portion, and the solubility to an alkaline developing solution can be promoted. On the other hand, since the low solubility with respect to alkaline developing solution is maintained in a non-exposed part, a resist function can be imparted by the difference in so...

Embodiment

[0042] 1. Synthesis of high ortho novolak type phenolic resin

Synthetic example 1）

[0044] 600 parts of m-cresol, 400 parts of p-cresol, 100 parts of 3,5-xylenol, 200 parts of hexane, and 5.5 parts of oxalic acid were charged into a 3L four-necked flask equipped with a stirring device, a thermometer, and a heat exchanger. After raising the temperature to 130° C., 547 parts of 37% formalin were gradually added over 3 hours, and then reacted for 2 hours while dehydrating. Afterwards, dehydrate under normal pressure to an internal temperature of 170°C, and then dehydrate at 9.3×10 3 Dehydration and monomer removal were performed up to 200° C. under a reduced pressure of Pa to obtain 950 parts of phenolic resin B with a weight average molecular weight of 4,200.

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PUM

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Abstract

Provided is a photoresist resin composition having excellent sensitivity and resolution and high film retention, as well as other properties that are at least commensurate with those of the commonly used compositions. The photoresist resin composition contains a high-ortho-novolac phenol resin, a naphthoquinone diazide derivative, and a solvent, the high-ortho-novolac phenol resin being obtained by reacting an aldehyde and one or two compounds selected from meta-cresol, para-cresol, 3,5-xylenol, and 2,3,5-trimethylphenol in the presence of an acid catalyst at a temperature of 110-220 DEG C.

Description

technical field [0001] The invention relates to a resin composition for photoresist. [0002] this application claims priority based on Japanese Patent Application No. 2011-039818 for which it applied to Japan on February 25, 2011, and Japanese Patent Application No. 2011-115661 for which it applied in Japan on May 24, 2011, and uses the content here. Background technique [0003] A fine circuit pattern such as a liquid crystal display device circuit or a semiconductor integrated circuit is formed into a target shape pattern through the steps described below. First, an insulating film or a conductive metal film is formed on a substrate. Next, a photoresist composition is uniformly coated or coated on the insulating film or conductive metal film. Next, the applied photoresist composition is exposed and developed in the presence of a mask having a predetermined shape. Thereafter, the metal film or insulating film is removed using the patterned photoresist film as a mask, an...

Claims

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Application Information

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IPC IPC(8): G03F7/023C08G8/02H01L21/027
CPCC08G8/24C08K5/235G03F7/0236C08L61/06
Inventor 今村裕治
Owner SUMITOMO BAKELITE CO LTD
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