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Method for manufacturing reverse-blocking semiconductor element

A technology of reverse blocking and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve the problem of low blocking voltage reverse withstand voltage, insufficient activation of the separation layer, residual crystallization, etc. problem, to achieve the effect of reverse withstand voltage

Inactive Publication Date: 2013-09-25
FUJI ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0036] However, in the reverse blocking type IGBTs having tapered grooves disclosed in the aforementioned Patent Documents 4 to 6, the separation layer is formed thin (or shallow) because the method of long-time diffusion is not used.
As a result, if the crystal defect generated by ion implantation remains without sufficient recovery during the annealing treatment, the crystal defect will remain in the vicinity of the pn junction of the separation layer, so the leakage current at the time of reverse bias tends to increase, And it is possible to lower the reverse withstand voltage designed to obtain a predetermined blocking voltage
[0037] And, in the well-known laser annealing treatment and the annealing treatment for activation by the flash lamp, if the focus position (the position that effectively contributes to the activation of the separation layer of the tapered groove during the lamp annealing treatment) is not correctly controlled, Also, there is a problem that the activation of the separation layer is insufficient and crystal defects remain

Method used

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  • Method for manufacturing reverse-blocking semiconductor element
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  • Method for manufacturing reverse-blocking semiconductor element

Examples

Experimental program
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Effect test

Embodiment approach 1

[0129]Embodiments of the reverse blocking type IGBT of the present invention will be described. In order to activate the ion-implanted layers of the collector layer 6 and the separation layer 4 , the ion-implantation is performed while heating the semiconductor substrate 1 during ion-implantation. Further, in order to achieve activation, two annealing treatments, laser annealing treatment and furnace annealing treatment, are performed in this order, which is a characteristic part of the manufacturing method of the reverse blocking semiconductor element of the first embodiment.

[0130] figure 2 It is a graph showing the impurity concentration profiles of the collector layer and the separation layer according to Embodiment 1 of the present invention. exist figure 2 , showing a boron dose of 1 x 10 15 cm -2 , The collector layer ((a), (c)) and the measurement results of the SR concentration distribution on the side surfaces of the separation layer ((b), (d)) (measurement ...

Embodiment approach 2

[0134] Next, Embodiment 2 of the reverse blocking type IGBT of the present invention will be described. In order to activate the ion implantation layers of the collector layer 6 and the separation layer 4, the ion implantation is performed while heating the semiconductor substrate 1 to 400° C. to 500° C. during the ion implantation. Then, for further activation, a furnace annealing treatment is first performed, and thereafter a laser annealing treatment is performed.

[0135] image 3 It is an impurity concentration distribution diagram of the collector layer and the separation layer according to Embodiment 2 of the present invention. exist image 3 , showing a boron dose of 1 x 10 15 cm -2 , The collector layer ((a), (c) when the accelerating voltage is 150KeV, and the temperature during ion implantation is 400°C ((a), (b)) and 500°C ((c), (d)) )) and the measurement results of the SR concentration distribution on the side surfaces of the separation layer ((b), (d)) (mea...

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Abstract

The present invention is a method for manufacturing a reverse-blocking semiconductor element wherein a tapered channel is formed. A back surface collector layer is formed and a discrete layer (4) is formed on the side edge surfaces of the tapered channel by furnace annealing and laser annealing following ion implantation in the back surface and tapered channel. Thus, even in a manufacturing method having a manufacturing step wherein a diffusion layer, which is formed by forming the tapered channel, ion implantation, and annealing on the side edge surfaces thereof, is formed into a discrete layer (4) for twisting and extending the end edge of a reverse-voltage resistant pn junction on the surface, reverse voltage resistance can be assured and reverse bias leak current can be reduced.

Description

technical field [0001] The present invention relates to the improvement of the manufacturing method of the reverse blocking type semiconductor element, so that the reliability of the insulated gate bipolar transistor (hereinafter referred to as "IGBT") which can only ensure the reliability of the forward voltage blocking ability under normal circumstances can be reversed. The reliability equal to the forward voltage blocking ability (referred to as "forward blocking ability") is also maintained in the forward voltage blocking ability (hereinafter referred to as "reverse blocking ability"), especially for the reverse blocking type Improvement of the manufacturing method of the IGBT. Background technique [0002] In a reverse blocking type semiconductor element, it is necessary to have a reverse blocking capability equal to a forward blocking capability. In order to improve the reliability of this reverse blocking capability, it is generally necessary to bend the reverse with...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/265H01L21/76H01L29/739H01L29/78
CPCH01L29/66325H01L21/26513H01L21/26586H01L21/268H01L21/324H01L21/76237H01L29/0661H01L29/36H01L29/7395
Inventor 中泽治雄
Owner FUJI ELECTRIC CO LTD
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