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Method for preparing high-density defect silicon carbide nanowire

A silicon carbide nanowire and high-density technology, applied in chemical instruments and methods, carbon compounds, nanotechnology, etc., can solve problems such as high production cost, high preparation temperature, and complicated process, and achieve the effect of reducing production cost

Inactive Publication Date: 2013-10-02
HARBIN INST OF TECH
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The present invention aims to solve the technical problems of high production cost, complex process, high preparation temperature, unsuitability for large-scale production and narrow luminescent band of the prepared silicon carbide nanowires in the existing method for preparing silicon carbide nanowires, thereby providing a Preparation method of silicon carbide nanowires with high density defects

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  • Method for preparing high-density defect silicon carbide nanowire
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  • Method for preparing high-density defect silicon carbide nanowire

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specific Embodiment approach 1

[0015] Specific Embodiment 1: In this embodiment, a method for preparing silicon carbide nanowires with high density defects is carried out according to the following steps:

[0016] 1. Ultrasonic cleaning the single crystal silicon wafer substrate with acetone for 15 minutes to 30 minutes, then ultrasonic cleaning with alcohol for 15 minutes to 30 minutes, and finally ultrasonic cleaning with deionized water for 15 minutes to 30 minutes to obtain a clean single crystal silicon wafer substrate;

[0017] 2. Place the clean monocrystalline silicon wafer substrate obtained in step 1 on the heating table in the magnetron sputtering vacuum chamber, and evacuate the vacuum chamber so that the gas pressure in the vacuum chamber is 1.0×10 -4 Pa~9.9×10 -4 Pa; start the heating device to heat the vacuum chamber from room temperature to 100°C to 650°C, and at a temperature of 100°C to 650°C, pass argon gas into the vacuum chamber at a gas flow rate of 10sccm to 100sccm, and wait for the ...

specific Embodiment approach 2

[0023] Specific embodiment 2: The difference between this embodiment and specific embodiment 1 is that in step 1, the monocrystalline silicon wafer substrate is ultrasonically cleaned with acetone for 20 min to 25 min, then ultrasonically cleaned with alcohol for 20 min to 25 min, and finally deionized water is used for ultrasonic cleaning Cleaning for 20 minutes to 25 minutes to obtain a clean single crystal silicon wafer substrate. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0024] Specific implementation mode three: the difference between this implementation mode and one of specific implementation modes one or two is that in step two, the vacuum degree in the vacuum chamber reaches 3.0×10 -4 Pa~7.0×10 -4 Pa. Others are the same as those in the first or second embodiment.

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Abstract

The invention discloses a method for preparing a high-density defect silicon carbide nanowire and relates to a preparation method of the nanowire. The technical problems that the current method for preparing the silicon carbide nanowire is high in production cost, complex in process and high in preparation temperature and is not suitable for mass production and the prepared silicon carbide nanowire is narrow in light-emitting wave band are solved by the method. The method comprises the following steps of 1, cleaning a substrate; 2, performing magnetron sputtering; and 3, performing calcining at high temperature. The method is used for preparing the silicon carbide nanowire.

Description

technical field [0001] The invention relates to a preparation method of nanowires. Background technique [0002] Nanowires are one-dimensional materials. Due to their special structure, the properties of nanowires are obviously different from those of bulk materials. The research on nanowires has also become a hot spot at present. As a third-generation wide-bandgap semiconductor material, silicon carbide nanowires show more specificity in terms of mechanical properties and field emission properties due to their nano-size effect, special structure and defects, and are expected to replace silicon as an important part of the semiconductor industry. , has become a new favorite in the microelectronics industry and the integrated circuit industry. However, silicon carbide bulk material is an indirect bandgap semiconductor material, the photoluminescence spectrum is in the blue range and the luminous efficiency is very low, so it is difficult to make light-emitting devices for use...

Claims

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Application Information

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IPC IPC(8): C01B31/36B82Y40/00C01B32/984
Inventor 朱嘉琦于海玲杨振怀韩杰才
Owner HARBIN INST OF TECH
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