A kind of preparation method of thin film transistor
A thin-film transistor and oxide semiconductor technology, which is used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of increased manufacturing process complexity and inability to use, and can reduce the number of photolithography, save costs, and reduce The effect of small parasitic elements
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Embodiment 1
[0070] Please refer to Figure 1.0 , which is a schematic cross-sectional structure diagram of a thin film transistor according to Embodiment 1 of the present invention.
[0071] The thin film transistor in this embodiment comprises a gate electrode 2 , a gate dielectric layer 3 , a metal oxide semiconductor layer 4 and a transparent conductive layer 5 . The gate electrode 2 is located on the substrate 1, the gate dielectric layer 3 is located on the substrate 1 and the gate electrode 2 and covers the gate electrode 2, the metal oxide semiconductor layer 4 is located on the gate dielectric 3, and the channel region is metal oxide The middle part of the semiconductor layer 4 is located on the gate dielectric 3 covering the gate electrode 2 and is aligned with the gate electrode 2. The source region and the drain region are made of transparent conductive materials, which are also respectively located on the gate dielectric 3, and are respectively connected to the gate electrode 2...
Embodiment 2
[0087] The structure and material of the thin film transistor in this embodiment are similar to those in the first embodiment, the difference is that a mask layer 9 is added in the manufacturing process, which is located on the transparent conductive layer.
[0088] The steps of the manufacturing method of the thin film transistor of the present embodiment are specifically composed of Figure 2.1 to Figure 2.12 shown, including the following steps:
[0089] 21) If Figure 2.1 As shown, a metal film with a thickness of 100 to 300 nanometers is formed on the front surface of the substrate 1. The method for generating the metal film can be magnetron sputtering, and its material can be chromium, molybdenum, titanium or aluminum, etc., and then It performs corresponding treatment to form the gate electrode 2, such as it can be formed by photolithography and etching; the substrate 1 in this embodiment can be a high temperature resistant substrate, such as a glass substrate, or it c...
Embodiment 3
[0105] The steps of the manufacturing method of the thin film transistor of the present embodiment are specifically composed of Figure 3.1 to Figure 3.8 shown, including the following steps:
[0106] 31) If Figure 3.1 As shown, a metal film with a thickness of 100 to 300 nanometers is formed on the front surface of the substrate 1. The method for generating the metal film can be a magnetron sputtering method, and its material can be chromium, molybdenum, titanium or aluminum, etc., or it can be Adopt transparent conductive film, such as ITO. It is then subjected to corresponding treatment to form the gate electrode 2, such as by photolithography and etching to form the gate electrode 2; the substrate 1 in this embodiment can be a high temperature resistant substrate, such as a glass substrate, or It is a non-high temperature resistant substrate, such as a transparent plastic substrate.
[0107] 32) If Figure 3.2 As shown, a layer of insulating film with a thickness of 1...
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Abstract
Description
Claims
Application Information
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