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Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer

A technology for light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of poor crystal quality, low luminous efficiency, and poor surface characteristics of the barrier layer in the second multiple quantum well layer, and achieve surface characteristics. Good, high luminous efficiency, good crystal quality effect

Active Publication Date: 2013-10-02
HC SEMITEK CORP
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  • Application Information

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Problems solved by technology

[0005] When making the first multi-quantum well layer, the growth temperature of the barrier layer increased by growing the GaN capping layer is still lower than the temperature required for normal growth of the barrier layer, so that when the barrier layer is grown at a low temperature, the surface A spiral island structure is formed, resulting in poor surface properties of the barrier layer of the first multi-quantum well layer, resulting in poor crystal quality and low luminous efficiency of the second multi-quantum well layer

Method used

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  • Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer
  • Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer
  • Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer

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Embodiment 1

[0028] This embodiment provides an epitaxial wafer of a semiconductor light-emitting diode, participating in figure 1 The epitaxial wafer includes a substrate 1 and a low-temperature buffer layer 2, a high-temperature buffer layer 3, a composite N-type layer, a composite multiple quantum well layer, and a composite P-type layer stacked on the substrate 1 in sequence. The composite multiple quantum well layer includes a first multiple quantum well layer 8 and a second multiple quantum well layer 9 grown on the first multiple quantum well layer 8 . combine figure 2 , the first multi-quantum well layer 8 is a multi-period structure, and each period includes a potential well layer b1 and a barrier layer a1 grown on the potential well layer b1. The barrier layers a1 of each period of the first multi-quantum well layer 8 are respectively doped with Si, figure 2 The hatched area indicates the portion doped with Si in the barrier layer a1.

[0029] Further, in the first multi-qua...

Embodiment 2

[0037] This embodiment provides a method for manufacturing semiconductor light-emitting diode epitaxial wafers, which is implemented by Thomas Swan (AIXTRON subsidiary) CCS MOCVD system, and the method uses high-purity hydrogen (H 2 ) or nitrogen (N 2 ) as carrier gas, trimethylgallium (TMGa) or triethylgallium (TEGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH 3 ) as Ga, Al, In and N sources respectively, with silane (SiH 4 ), and dimagnesium (Cp2Mg) were used as N and P-type dopants, respectively.

[0038] Specifically, refer to image 3 , and combined with figure 1 and figure 2 In this embodiment, the method for manufacturing a semiconductor light emitting diode epitaxial wafer includes the following steps:

[0039] Step S1, provide a substrate 1 and perform thermal cleaning and nitriding treatment on the substrate 1: thermally clean the surface of the substrate 1 in the temperature range of 1050-1200°C (for example, 1180°C) in a pure hydrogen at...

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Abstract

The invention discloses an epitaxial wafer of a semiconductor light emitting diode, and relates to the technical field of semiconductors. The epitaxial wafer comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, a compound N-type layer, a compound multi-quantum well layer and a compound P-type layer which grow on the substrate sequentially, wherein the compound multi-quantum well layer comprises a first multi-quantum well layer and a second multi-quantum well layer growing on the first multi-quantum well layer; the first multi-quantum well layer is in a multi-cycle structure; each cycle comprises a potential well layer and a barrier layer growing on the potential well layer; and the barrier layer of each cycle of the first multi-quantum well layer is doped with Si. Si doped in the barrier layers of the first multi-quantum well layer of the epitaxial wafer can inhibit spiral island structures from forming on the surfaces of the barrier layers, so that the surface characteristics of the barrier layers are good, and the crystalline quality is improved. In addition, the invention discloses a manufacturing method of the epitaxial wafer of the semiconductor light emitting diode.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial wafer of a semiconductor light emitting diode and a manufacturing method thereof. Background technique [0002] Group III nitrides represented by gallium nitride (GaN), indium nitride (InN), aluminum nitride (AlN) and their alloy indium gallium nitride (InGaN) are widely used because of their good physical and chemical properties. applied to light-emitting diodes. [0003] The light-emitting diode epitaxial wafer includes a substrate and a low-temperature buffer layer, a high-temperature buffer layer, a composite N-type layer, a composite multiple quantum well layer and a composite P-type layer stacked on the substrate in sequence. Wherein the composite multi-quantum well layer comprises a first multi-quantum well layer and a second multi-quantum well layer stacked on the first multi-quantum well layer, and the first multi-quantum well layer and the second mu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/14H01L33/12H01L33/04H01L33/00
Inventor 吴克敏魏世祯
Owner HC SEMITEK CORP
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