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Charge transfer compound infrared absorption material with absorption peak at 1550nm

A charge transfer, infrared absorption technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of not absorbing the wavelength of light communication

Inactive Publication Date: 2013-10-09
YUNNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] What the present invention aims to solve is the problem that the existing infrared absorbing material is doped with low concentration MoO3 and the absorption peak is below 1400nm, and cannot absorb the wavelength of light communication. Material

Method used

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  • Charge transfer compound infrared absorption material with absorption peak at 1550nm
  • Charge transfer compound infrared absorption material with absorption peak at 1550nm

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Embodiment 1

[0009] Example 1: A charge transfer composite infrared absorbing material with an absorption peak at 1550nm, vapor-deposited MoO3 material and TCTA organic matter on a sapphire substrate, the thickness of the vapor-deposited layer is 100nm, and the mass percentage of MoO3 in the vapor-deposited layer is 75wt %-83wt%. Through testing, it is found that when the mass percentage of MoO3 in the absorbing material accounts for 75wt%, the maximum absorption is achieved.

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Abstract

The invention relates to a charge transfer compound infrared absorption material with an absorption peak at 1550nm, which belongs to the field of an organic photoelectric material, and relates to a charge transfer compound infrared absorption material with the absorption peak at 1550nm for infrared detection and organic light emitting diode. The charge transfer compound infrared absorption material with the absorption peak at 1550nm is characterized in that a molybdenum trioxide (MoO3) material and TCTA organism are evaporated on a sapphire substrate, the thickness of an evaporation layer is 100nm, and the mass percentage of the MoO3 in the evaporation layer is 75 to 83 percent. According to the charge transfer compound infrared absorption material with the absorption peak at 1550nm, the MoO3 material and the TCTA organism in high concentration are collectively evaporated to obtain a carrier transfer compound infrared absorption material, and a good absorption intensity can be achieved nearby the communication wavelength 1500nm of an optical fiber.

Description

technical field [0001] The invention belongs to the field of organic photoelectric materials, and is used for infrared detection, and the absorption peak of an organic light-emitting diode is located at 1550nm for a charge transfer composite infrared absorption material. Background technique [0002] The infrared detector is a device that converts the incident infrared radiation signal into an electrical signal output. Infrared radiation is electromagnetic waves with wavelengths between visible light and microwaves, which cannot be detected by the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. Modern infrared detectors mainly use infrared thermal effect ...

Claims

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Application Information

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IPC IPC(8): C09K3/00H01L51/46
CPCY02E10/549
Inventor 武思平康滢江楠吕正红
Owner YUNNAN UNIV