Method for confirming photoetching technique window through accurate and quantitative defect detection

Abstract

The invention discloses a method for confirming a photoetching technique window through accurate and quantitative defect detection. The method comprises the following steps: providing a wafer used for confirming the photoetching technique window; setting a benchmark chip in the wafer; distributing and arranging non-benchmark chips in the wafer according to a matrix of photoetching energy and focal length; successively exposing the benchmark chip and the non-benchmark chips; successively performing the defect detection on the exposed benchmark chip and the exposed non-benchmark chips; comparing the defect detection result of the exposed benchmark chip with the defect detection result of the exposed non-benchmark chips to obtain the confirmed photoetching technique window, wherein the benchmark chip is a chip used for determining the benchmark photoetching technique conditions. The method provided by the invention can be used for accurately and quantitatively analyzing a photoetching technique, and obtained photoetching technique window confirmation data have the very good accuracy and the accessible high readability.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a method for confirming the photolithography process conditions of a wafer photolithography process window, specifically a method for accurate and quantitative defect detection and confirmation of the photolithography process window. Background technique [0002] Counting from the advent of the first transistor, the development of semiconductor technology has been more than half a century, and now it still maintains a strong development trend, continuing to follow Moore's law, that is, the degree of chip integration doubles in 18 months, and the device size every three years Zoom out 0.7 times the speed of development. In the manufacturing process of integrated circuits, multiple processes such as material preparation, masking, photolithography, cleaning, etching, doping, and chemical mechanical polishing have gone through. Among them, the photolithograph...

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Problems solved by technology

[0010] In view of the above existing problems, the present invention discloses a method for accurate and quantitative defect detection and confirmation of the lithography process window, so as to overcome the unfavorable conditions of the lithography process and the optimal conditions of the lithography process due to the introduction of noise and other unfavorable factors in the prior art. Confirmation of the process window, and the problems of low data readability and poor accuracy

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