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Flash memory device structure and fabrication method

A manufacturing method and technology of flash memory devices, which are applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of high structural resistance of flash memory devices, affecting the response speed, and long response time, so as to reduce the overall resistance and improve the response speed , the effect of reducing the response time

Active Publication Date: 2017-09-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In the prior art, due to the small size of the control gate 21 in the flash memory device structure, the resistance of the entire flash memory device structure is too large, which affects the response speed and causes the response time to be too long

Method used

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  • Flash memory device structure and fabrication method
  • Flash memory device structure and fabrication method
  • Flash memory device structure and fabrication method

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Embodiment Construction

[0045] The structure and manufacturing method of the flash memory device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0046] Please refer to figure 2 In this embodiment, a method for making a flash memory is proposed, comprising the following steps:

[0047] S100: Provide a semiconductor substrate 100, the semiconductor substrate 100 is a silicon substrate, such as image 3 shown;

[0048] Shallow trench isolation (not shown) may be provided in the semiconductor substrate 100, and the material of the semiconductor substrate 100 may be single crystal...

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Abstract

The present invention proposes a flash memory device structure and a manufacturing method. A first window is formed by etching in the mask layer, and then a control gate is formed in the first window. Then, a second window is formed in the first window, and then a second window is formed in the second window. A word line is formed in the window, then etched to form a floating gate, and finally the sidewalls are formed. This results in a larger control gate, which reduces the overall resistance of the flash memory device, increases the reaction speed, and reduces the response time.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a structure and a manufacturing method of a flash memory device. Background technique [0002] Memory is used to store large amounts of digital information. Currently there are many types of memory, such as RAM (random access memory), DRAM (dynamic random access memory), ROM (read-only memory), EPROM (erasable programmable read-only memory), FLASH (flash memory) and so on. [0003] Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers, and USB flash drives. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the pu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L27/11521H01L29/423H10B41/30H10B69/00
Inventor 于涛
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP