Hard mask layer structure, manufacturing method thereof and manufacturing method of semiconductor device

Abstract

The invention provides a hard mask layer structure, a manufacturing method thereof and a manufacturing method of a semiconductor device. Through oxygen-free plasma-enhanced deposition of a first TEOS hard mask layer over a carbon-containing low-K dielectric layer and then through oxygen plasma-enhanced deposition of a second TEOS hard mask layer, the first TEOS hard mask layer can reduce carbon loss of a surface of a lower carbon-containing low-K dielectric layer during deposition of a TEOS hard mask layer in the prior art, restrain the formation of carbon-free oxides on the interface of the lower carbon-containing low-K dielectric layer, and play the role of a buffer layer to mitigate the difference of wet etching selection ratio of the second TEOS hard mask layer, the carbon-free oxides and the carbon-containing low-K dielectric layer. Therefore cut damages on the bottom of the interface of the hard mask layer structure and the carbon-containing low-K dielectric layer after wet cleaning are avoided, and a formed through-hole and a process window of a groove are enlarged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a hard mask layer structure, a manufacturing method thereof, and a semiconductor manufacturing method. Background technique [0002] In the manufacture of integrated circuit metal interconnection lines, low-k dielectric materials are widely used to replace SiO 2 To shorten the RC delay. 45nm and below processes will generally use carbon-doped low-K materials to improve the performance of integrated circuits through their good mechanical properties, thermal and chemical properties. [0003] Low dielectric constant materials usually include oxides (such as SiOF) and organic polymers. Among them, the K value of SiOF is 3.5, and the decrease of K value is not large, and the contained F will react with water vapor, which will cause reliability problems of interconnection lines. Organic polymers have a lower dielectric constant K and better filling performance, but their d...

AI Technical Summary

Problems solved by technology

This undercut damage 106 will make the PETEOS hard mask layer 102 easy to be peeled off (peeling), and will cause disconnection of the barrier / seed layer (barrier / seed layer) grown before the subsequent copper filling, seriously affecting the copper filling. performance, which in turn affects the conductivity and other properties of the interconnection line

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