Hard mask layer structure, manufacturing method thereof and manufacturing method of semiconductor device

Abstract

The invention provides a hard mask layer structure, a manufacturing method thereof and a manufacturing method of a semiconductor device. Through oxygen-free plasma-enhanced deposition of a first TEOS hard mask layer over a carbon-containing low-K dielectric layer and then through oxygen plasma-enhanced deposition of a second TEOS hard mask layer, the first TEOS hard mask layer can reduce carbon loss of a surface of a lower carbon-containing low-K dielectric layer during deposition of a TEOS hard mask layer in the prior art, restrain the formation of carbon-free oxides on the interface of the lower carbon-containing low-K dielectric layer, and play the role of a buffer layer to mitigate the difference of wet etching selection ratio of the second TEOS hard mask layer, the carbon-free oxides and the carbon-containing low-K dielectric layer. Therefore cut damages on the bottom of the interface of the hard mask layer structure and the carbon-containing low-K dielectric layer after wet cleaning are avoided, and a formed through-hole and a process window of a groove are enlarged.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a hard mask layer structure, a manufacturing method thereof, and a semiconductor manufacturing method. Background technique [0002] In the manufacture of integrated circuit metal interconnection lines, low-k dielectric materials are widely used to replace SiO 2 To shorten the RC delay. 45nm and below processes will generally use carbon-doped low-K materials to improve the performance of integrated circuits through their good mechanical properties, thermal and chemical properties. [0003] Low dielectric constant materials usually include oxides (such as SiOF) and organic polymers. Among them, the K value of SiOF is 3.5, and the decrease of K value is not large, and the contained F will react with water vapor, which will cause reliability problems of interconnection lines. Organic polymers have a lower dielectric constant K and better filling performance, but their d...

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Problems solved by technology

This undercut damage 106 will make the PETEOS hard mask layer 102 easy to be peeled off (peeling), and will cause disconnection of the barrier/seed layer (barrier/seed layer) grown

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