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Schottky semiconductor device with charge compensation and manufacturing method thereof

A charge compensation and conductive semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of fast turn-on and turn-off speed, low forward turn-on voltage, and large reverse leakage current.

Active Publication Date: 2013-10-30
北海惠科半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have the disadvantages of large reverse leakage current and cannot be used in high-voltage environments.

Method used

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  • Schottky semiconductor device with charge compensation and manufacturing method thereof
  • Schottky semiconductor device with charge compensation and manufacturing method thereof

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Embodiment 1

[0022] figure 1 It is a sectional view of a Schottky semiconductor device with charge compensation of the present invention, combined below figure 1 The semiconductor device of the present invention will be described in detail.

[0023] A Schottky semiconductor device with charge compensation, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The polycrystalline second conductive semiconductor material 4, located in the first conductive semiconductor material 3, is a polycrystalline semiconductor silicon material of P conductivity type, and the dopin...

Embodiment 2

[0032] FIG. 2 is a cross-sectional view of a Schottky semiconductor device with charge compensation according to the present invention. The semiconductor device of the present invention will be described in detail below with reference to FIG. 2 .

[0033] A Schottky semiconductor device with charge compensation, comprising: a substrate layer 1, which is an N conductivity type semiconductor silicon material, and the doping concentration of phosphorus atoms is 1E19 / CM 3 , on the lower surface of the substrate layer 1, the electrodes are drawn out through the lower surface metal layer 11; the first conductive semiconductor material 3, located on the substrate layer 1, is a semiconductor silicon material of N conductivity type, and the doping concentration of phosphorus atoms is 1E16 / CM 3 ; The second single-crystal conductive semiconductor material 6, located in the first conductive semiconductor material 3, is a polycrystalline semiconductor silicon material of P conductivity typ...

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Abstract

The invention discloses a Schottky semiconductor device with charge compensation. The electric field intensity distribution of drifting areas is changed through charge compensation structures, and a flat electric field intensity distribution curve is formed. Thus, the doping concentration of impurities of the drifting areas can be improved, forward-direction conduction resistance of a component is lowered greatly, and the forward-direction conduction character of the component is improved. The invention further provides a manufacturing method of the Schottky semiconductor device with charge compensation.

Description

technical field [0001] The invention relates to a Schottky semiconductor device with charge compensation, and also relates to a manufacturing method of the Schottky semiconductor device with charge compensation. The semiconductor device of the present invention is a basic structure for manufacturing power rectifying devices. Background technique [0002] Power semiconductor devices are widely used in power management and power applications, especially semiconductor devices involving Schottky junctions have become an important trend in device development. Schottky devices have the advantages of low forward turn-on voltage and fast turn-on and turn-off speed. At the same time, Schottky devices also have disadvantages such as large reverse leakage current and cannot be used in high-voltage environments. Contents of the invention [0003] In view of the above problems, the present invention provides a Schottky semiconductor device with charge compensation and a manufacturing ...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
Inventor 朱江
Owner 北海惠科半导体科技有限公司
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