37 results about "Electric field magnitude" patented technology

An image forming apparatus includes a photosensitive drum to which an electrostatic image is formed and a developing sleeve carrying a developer including toner carrier. An alternating voltage is applied to the sleeve to form an alternating electric field between the sleeve and the drum to develop the electrostatic image with the developer. A relation |K1|<|K2| is satisfied, where K1: a slope at an electric field intensity Ed=|(Vp2−VL) / D|, K2: a slope at an electric field intensity Eb=|(Vp1−VL) / D|, VL: a potential [V] of the electrostatic image at which a maximum density is obtained, Vp1: a peak potential [V] that provides a potential difference to move the toner toward the drum, Vp2: a peak potential [V] that provides a potential difference to move the toner toward the sleeve, and D: a closest distance [m] between the drum and the sleeve.

In a horizontal electric field drive type liquid crystal electro-optic device wherein a liquid crystal material is driven by controlling the strength of an electric field parallel to a substrate, noncontinuity of the electric field strength around each pixel electrode is minimized and thereby the occurrence of flaws in the orientation of the liquid crystal material and dispersion in operation are reduced and a construction having improved display characteristics and a method of manufacturing the same are provided. In a horizontal electric field drive type liquid crystal electro-optic device wherein a gate electrode 403, a source electrode 407, a drain electrode 408, a semiconductor film 406 and a common electrode 404 are formed on a glass substrate and a liquid crystal material is driven by controlling the strength of an electric field substantially parallel to the glass substrate, the electrodes and the semiconductor film are made curved, for example semi-circular or semi-elliptical, in sectional profile. These curved sectional profiles can be formed by suitably selecting and combining various patterning and etching methods.

A method for determining the power frequency electric field of the undulating ground overhead transmission line based on the analog charge method provided by the present invention comprises the following steps: a. Selecting the mirror image ground, and assuming that the mirror image ground extends into the undulating ground; b. Set the analog charge and the matching point corresponding to the analog charge on the mirror image, so that the potential of the undulating ground is 0; c. According to the superposition principle, construct the analog charge equation group, and solve the size of the analog charge according to the equation group of the analog charge; d . Calculate the power frequency electric field distribution on the undulating ground according to the size of the simulated charge. Based on the mirror image principle and combined with the optimized simulated charge method, the present invention can calculate the electric field distribution of the complex terrain that the overhead conductor line passes through, effectively overcoming the traditional method. For the technical problem that the electric field distribution of the undulating terrain cannot be accurately calculated, the accuracy of the calculation of the power frequency electric field of the conductor line is greatly improved, and the difficulty of calculation is greatly reduced, the amount of calculation is reduced, the calculation accuracy is further improved, and the electric field is enhanced. Applicability of calculation methods.

A method for removing EEG artifacts induced by transcranial magnetic stimulation of the brain, using electric field simulation or electric field measurement, and by calibrating the method of generating an induced electric field by a magnetic stimulation coil, to determine the optimal position corresponding to the EEG acquisition device and the magnetic stimulation coil Optimal position to detect and obtain EEG signals. The present invention considers the relative position and angle of the EEG acquisition device and the stimulating coil when determining the brain stimulation area of ​​the transcranial magnetic stimulation, and gradually corrects the relative position of the wire and the coil by simulating or measuring the electric field strength and direction induced by the coil. EEG signals under TMS. It can remove most of the artifacts of EEG under TMS, make the EEG signal induced by TMS more accurate, reduce the side effects of TMS, and ensure its stimulation effect, fully reflect the role of TMS in the transmission of brain networks, and affect the EEG induced by TMS. Research is very important. The method can reduce the amplitude of artifacts by 10 to 20 times, and can reduce the duration of artifacts by 30%.

The invention provides a field sensor calibration system and a method, and the problems of a small calibration area and large influence on field distribution by a field sensor are solved. The field sensor calibration system comprises a single cone body and a flat plane body, and a single cone body antenna is formed. The single cone body is gradually narrowed from a top surface to a bottom surface, and the rotation curve shape of a side face is an exponential curve. According to the field sensor calibration method, firstly the single cone body antenna is set and is gradually narrowed from the top surface to the bottom surface, thus the space area used by the field sensor calibration is enlarged; a cube calibration area is defined in the range of single cone body antenna radiation, the vertex and each side middle point of the cube are provided with reference points, the electric field intensities of each reference point in the conditions with the field sensor and without the field sensor are calculated and compared, and the influence of the field sensor on the field distribution in the calibration area is obtained. The single cone body antenna impedance transformation method of the present invention is in the form of exponential transform, and the calibration precision of the field sensor is improved.

The invention discloses a method for specific continuous separation of micro-scale particles. The method can be used for realizing continuous adjustable multi-path separation of three types of different-size polystyrene microsphere mixtures by using a dielectrophoresis (DEP) microfluidic chip for specific continuous separation of micro-scale particles, and by regulating the flow rate of a fluid, the electric field intensity and the pulse frequency under the condition of continuous sampling. The three types of particles can move to the different spanwise positions of a channel since the three types of particles bear different intensities of DEP force and Stokes force; and the type of the extracted particle can be controlled at will by regulating control parameters. When an electric field parameter and a flow field parameter are matched, the medium-size 5mum particles can move on a flow channel always in an electrode tilting direction; the 3mum particles can move forwards substantially along the main flow direction; and the 10mum particles are influenced remarkably by the electric field and the flow field, and can move to the other side of the channel, so that the three types of particles are discharged from different outlets to obtain the 3mum, 5mum, and 10mum polystyrene particles, respectively.

An apparatus and method for measuring low or trace concentrations of compounds and mixture of gases. A method and apparatus of the invention permits separating ions of different mobilities by passing them through an abrupt change or step in electric field magnitude. By using the separation method, the compounds of interest may be measured with less interference from other compounds of the gas mixture, which reduces or eliminates the need for prior separation of the components of the gas mixture. Several embodiments of the invention are described including the use of current amplifiers on one, or more, parts of the apparatus. While a single screen can provide a chamber which is divided into two regions of different electric fields, it is within the scope of the invention to include multiple screens to provide several steps in the electric field permitting it to be possible to trap and measure ions with successively higher mobilities. The gases used include halogenated compounds, including fluorocarbons, and most preferable SF6.

At least one cooling channel is positioned adjacent to an electronic component. The cooling channel communicates with plenums at each of two opposed axial ends. A dielectric fluid is received in the cooling channel. The cooling channel is provided with at least one electrode. A potential is applied to the at least one electrode such that an electric field magnitude at the downstream end of the channel is less than an upstream electric field magnitude, and such that a dielectrophoretic force on a bubble in the cooling channel will force it downstream.

The invention discloses an in-situ test system for magnetoelectric stress coupling of a nitride light emitting diode, comprising: a nitride light emitting diode, an external current source, an XRD test component and a magnetic field generating device, and is characterized in that the side wall of the nitride light emitting diode is formed Magnetic material, pass current through the P-type electrode and N-type electrode of the nitride light-emitting diode, place it on the sample stage of the XRD test assembly, generate a magnetic field around the nitride light-emitting diode through a magnetic field generating device, and make the nitride light-emitting diode Light-emitting diodes produce magnetic field-electric field-stress coupling effects, and use XRD single crystal diffraction to test the lattice constant of light-emitting diodes in the process of magnetic field and electric field changes in situ, and then control the magnitude of the magnetic field and electric field in situ, and adjust the stress change of nitrides , so that the light-emitting diode can obtain the highest luminous efficiency.

Nanosized filamentary carbon structures (CNTs) nucleating over a catalyzed surface may be grown in an up-right direction reaching a second surface, spaced from the first surface, without the need of applying any external voltage source bias. The growth process may be inherently self-stopping, upon reaching a significant population of grown CNTs on the second surface. A gap between the two surfaces may be defined for CNT devices being simultaneously fabricated by common integrated circuit integration techniques. The process includes finding that for separation gaps of up to a hundred or more nanometers, a difference between the respective work functions of the materials delimiting the gap space, for example, different metallic materials or a doped semiconductor of different dopant concentration or type, may produce an electric field intensity orienting the growth of nucleated CNTs from the surface of one of the materials toward the surface of the other material.

The invention relates to a weak electric field detection technology, particularly relates to an electric field detection method and device based on stark effects of Rydberg atoms, and solves the technical problems that the measurement on an electric field, particularly a weak electric field, is not accurate enough at present, and the sensitivity is not high enough. The electric field detection method based on the stark effects of the Rydberg atoms comprises the following steps: (a) oppositely arranging two beams of laser and collinearly emitting the laser into a sample tank which is internally filled with alkaline metal atom steam; (b) acquiring a signal of the second beam of the laser emitted out by the sample tank and converting the signal into a corresponding electric signal; and (c) analyzing the acquired electric signal, and if the electric field exists, observing an absorption spectrum with a stark cracking phenomenon from the signal, so as to further solve the intensity of the electric field E. According to the electric field detection method and device based on the stark effects of the Rydberg atoms, the electric field can be measured by the stark effects with an alkaline metal atom Rydberg energy level; the measurement precision is high and the electric field strength which is weakened to an mV / cm grade can be measured.