Sputtering Targets for Solar Cells
A technology for solar cells and sputtering targets, which is applied in the field of sputtering targets for solar cells, can solve problems such as the reduction of film homogeneity, and achieve the effects of small reduction in time-lapse and high sputtering rate.
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Embodiment 1
[0104] In (purity: 99.99% or higher) was melted at 180° C., and the resulting molten metal was poured into a metal mold to cast a flat plate-shaped ingot with a length of 100 mm, a width of 100 mm, and a thickness of 15 mm. The obtained ingot was rolled using a Nippon CLOSS rolling calender at room temperature with a reduction of 1 mm / pass to obtain a rolled sheet with a thickness of 9 mm. The obtained rolled sheet was cut into a disc shape with a diameter of 102 mm. Both surfaces were cut by 1 mm each using a milling cutter to make smooth surfaces. The rolled disk (target material) and the disc-shaped back plate made of oxygen-free copper with a diameter of 110 mm were heated on a hot plate so that the temperature would reach 130° C., with their bonding surfaces facing upward. An alloy (melting point 125°C) consisting of 50% by mass of In (purity of 99.99% or more) and 50% by mass of Sn (purity of 99.99% or more) is used as a joining material, and the 130 The molten metal a...
Embodiment 2
[0107] An indium target was produced in the same manner as in Example 1, except for the point of setting the heating temperature of the rolled circular plate and the back plate to 120° C., and the use of An alloy (melting point 115°C) composed of 90% In (purity 99.99% or more) and 10% by mass Ga (purity 99.99% or more), and the molten metal temperature of this alloy is 120°C. Various evaluations were performed on this indium target by the above-mentioned measuring method. Table 1 shows the results.
Embodiment 3
[0109] An indium target was produced in the same manner as in Example 1 except that the thickness of the flat plate-shaped ingot was 18 mm. Various evaluations were performed on this indium target by the above-mentioned measuring method. Table 1 shows the results.
[0110] In addition, when performing the above-mentioned sputtering rate measurement using this indium target, the film thickness of the indium film obtained by this sputtering is surface was observed. figure 2 The resulting images are shown.
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Abstract
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