w-cu-sic ternary composite material and preparation method thereof

Abstract

The invention is a novel W-Cu-SiC ternary thermal control composite material having a high density structure and a preparation method thereof. The W-Cu-SiC ternary composite material is prepared by mixing a W powder, an SiC powder and a Cu powder in a proportion and then carrying out hot pressing sintering. The composite material contains 30 to 50 vol% of Cu, 50 to 70 vol% of W and SiC, wherein the volume fraction range of SiC is 20 to 80%, and the corresponding volume fraction range of the W powder is 80 to 20%; the density degrees of the W-Cu-SiC composite material are all up to 98% or more in different proportions, and the thermal expansion coefficients of the composite material are all stable between 5.7*10<-6> to 9.74*10<-6> / K in a temperature range of 40 to 300 DEG C. The composite material is the novel composite material having convenient molding, low cost and high performance, and has wide application prospects in electronic packaging, semiconductor cooling fins and the like.

Description

technical field [0001] The invention relates to the field of composite materials, in particular to a method for preparing a high-density W-Cu-SiC ternary thermal control composite material by a hot pressing sintering method. Background technique [0002] The W-Cu-SiC ternary thermal control composite material system is a ternary system composite material composed of Cu with high conductivity and high plasticity, W with high melting point and low thermal expansion coefficient, and SiC with low density, low cost and high hardness. W has the advantages of high melting point, high density, low thermal expansion coefficient and high strength, Cu has good thermal conductivity and electrical conductivity, SiC has the advantages of low thermal expansion coefficient, high strength, low density and excellent wear resistance, combined with W, Cu and SiC The excellent properties of the three, with low thermal expansion coefficient, low cost, high hardness, high strength, good electrical...

AI Technical Summary

Problems solved by technology

[0003] In the field of electronic packaging and semiconductor heat dissipation applications, due to the extremely high heat resistance and good electrical and thermal conductivity of W-Cu binary composite materials, and the low thermal expansion coefficient matched with silicon wafers, gallium arsenide and ceramic materials, it is obtained However, the main disadvantages of binary W-Cu composites are their high density, high cost and complex process.

Binary W-Cu system composites are required to have a low coefficient of thermal expansion, so that they generally use Cu with high content, low thermal expansion coefficient and high density and Cu with low content, high thermal expansion coefficient and high density, which will inevitably lead to the density of binary W-Cu composite materials. Both are too large, which affects its machinability and limits the application of binary W-Cu composites

At present, there are many related reports on the preparation and research of W-Cu composite materials and SiC-Cu composite materials. However, there are few reports and researches on W-Cu-SiC composite materials. Therefore, the present invention is W-Cu- The research on SiC composite materials provides a reference and has certain significance

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