Copper zinc tin sulfide (CZTS) flexible solar cell and preparation method thereof
A flexible solar cell and flexible substrate technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of low efficiency of CZTS flexible solar cells and achieve high efficiency
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[0044] See figure 2 In one embodiment, a method for preparing a CZTS flexible solar cell includes the following steps S110 to S150.
[0045] Step S110: Provide a rigid substrate, and prepare a temporary back electrode layer laminated on the rigid substrate.
[0046] See also image 3 The rigid substrate 80 is preferably soda lime glass. After the rigid substrate 80 is cleaned and dried, molybdenum or aluminum is sputtered onto the clean and dry rigid substrate 80 by a sputtering method to form a temporary back electrode layer 90 laminated on the rigid substrate 80.
[0047] The thickness of the temporary back electrode layer 90 is 800 nm.
[0048] Step S120: preparing an absorption layer laminated on the temporary back electrode layer, the absorption layer being a copper-zinc-tin-sulfur layer or a copper-zinc-tin-selenium layer.
[0049] The absorption layer 20 is a copper-zinc-tin-sulfur layer or a copper-zinc-tin-selenium layer. The step of preparing the absorption layer 20 include...
Example Embodiment
[0091] Example 1
[0092] Preparation of CZTS flexible solar cell
[0093] 1. Preparation of copper zinc tin selenium layer by co-evaporation method
[0094] 1. Preparation of precursors for copper, zinc, tin, and selenium films
[0095] Using soda lime glass as a rigid substrate, a temporary back electrode layer with a thickness of 800 nm is plated on the rigid substrate, and the rigid substrate plated with the temporary back electrode layer is placed on the MBE sample stage so that the temporary back electrode layer faces Evaporation source furnace, turn on the rotary switch of the sample stage, and set the temperature of Cu source furnace, ZnSe source furnace, Sn source furnace, Se source furnace and sample stage to 1210℃, 765℃, 1140℃, 210℃ and 200℃ respectively. Open the Cu source furnace baffle, ZnSe source furnace baffle, Sn source furnace baffle, and Se source furnace baffle, and vaporize for 720 seconds to obtain a copper-zinc-tin-selenium film precursor with a composition ra...
Example Embodiment
[0117] Example 2
[0118] Preparation of CZTS flexible solar cell
[0119] 1. Co-sputtering method for preparing copper-zinc-tin-sulfur film
[0120] 1. Preparation of precursors for copper, zinc, tin and sulfur thin films
[0121] Using soda lime glass as a rigid substrate, a temporary back electrode layer with a thickness of 800 nm is plated on the rigid substrate, and the rigid substrate plated with the temporary back electrode layer is placed on the magnetron sputtering sample stage to make the temporary back With the electrode layer facing the substrate baffle, turn on the rotary switch of the sample stage, set the power of the Cu target, ZnS target and SnS2 target to 60w, 75w and 70w respectively, and open the Cu target baffle, ZnS target baffle and SnS at the same time 2 The target baffle was sputtered for 1 hour to obtain a copper-zinc-tin-sulfur film precursor with a composition ratio of Cu:Zn:Sn:S=1.8:1.1:1.3:3.9 and a thickness of the copper-zinc-tin-sulfur film precursor o...
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