Method for preparing graphene through chemical vapor deposition

A chemical vapor deposition and graphene technology, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of low carrier mobility of graphene and achieve the goal of large carrier mobility Effect

Inactive Publication Date: 2013-11-27
SUZHOU AITESI FURTHER MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Technical problem to be solved: low carrier mobility of graphene prepared by conventional chemical vapor deposition

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0007] The cobalt-nickel alloy substrate was washed three times with 75% ethanol solution and dried at 50 °C. Put the cobalt-nickel alloy substrate into the quartz furnace, heat the temperature to 880°C, the heating rate is 25°C / min, pass helium, and the helium flow rate is 50 sccm; keep the temperature at 880°C and add ethylbenzene evenly into the quartz furnace ; The temperature of the quartz furnace was lowered to room temperature, and the sample was taken out; the sample was subjected to ultrasonic treatment, the ultrasonic treatment power was 800w, and the time was 60min to obtain graphene. The carrier mobility was measured, and the carrier mobility was 1.57×10 5 cm 2 / Vs.

Embodiment 2

[0009] The cobalt-nickel alloy substrate was washed three times with 75% ethanol solution and dried at 80 °C. Put the cobalt-nickel alloy substrate into the quartz furnace, heat the temperature to 890°C, the heating rate is 25°C / min, pass helium, and the helium flow rate is 50 sccm; keep the temperature at 890°C and add ethylbenzene evenly into the quartz furnace ; The temperature of the quartz furnace was lowered to room temperature, and the sample was taken out; the sample was subjected to ultrasonic treatment, the ultrasonic treatment power was 800w, and the time was 90min to obtain graphene. The carrier mobility was measured, and the carrier mobility was 1.64×10 5 cm 2 / Vs.

Embodiment 3

[0011] The cobalt-nickel alloy substrate was washed three times with 75% ethanol solution and dried at 60 °C. Put the cobalt-nickel alloy substrate into the quartz furnace, heat the temperature to 885°C, the heating rate is 25°C / min, pass helium, and the helium flow rate is 50 sccm; keep the temperature at 885°C and add ethylbenzene evenly into the quartz furnace ; The temperature of the quartz furnace was lowered to room temperature, and the sample was taken out; the sample was subjected to ultrasonic treatment, the ultrasonic treatment power was 800w, and the time was 75min to obtain graphene. The carrier mobility was measured, and the carrier mobility was 1.59×10 5 cm 2 / Vs.

[0012] It can be seen from the above three examples that the prepared products all have relatively high carrier mobility.

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PUM

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Abstract

The invention relates to a method for preparing graphene through chemical vapor deposition. The method comprises the following steps: cleaning a substrate cobalt-nickel alloy three times by using an ethanol solution with a mass fraction of 75%, and drying at a temperature of 50-80 DEG C; placing the cobalt-nickel alloy substrate into a quartz furnace, heating to achieve a temperature of 880-890 DEG C, and introducing helium gas, wherein a helium gas flow rate is 50 sccm; maintaining the temperature at 880-890 DEG C, and uniformly adding ethylbenzene to the quartz furnace; cooling the quartz furnace to a room temperature, and taking the sample; and carrying out an ultrasound treatment on the sample to obtain the graphene, wherein an ultrasound treatment power is 800 w, and a time is 60-90 min. The prepared graphene has high carrier mobility.

Description

technical field [0001] The invention relates to a method for preparing graphene, in particular to a method for preparing graphene by chemical vapor deposition. Background technique [0002] Graphene has very good properties and has become a research hotspot for scientists in recent years. There are many methods for preparing graphene, among which chemical vapor deposition and chemical reduction are the most researched. In the process of chemical vapor deposition, the choice of substrate material is very important. Poor choice of substrate material will lead to poor performance of the finally obtained graphene, such as not having good carrier mobility. Therefore, developing a graphene with good carrier mobility can expand the market space of graphene. Contents of the invention [0003] Technical problem to be solved: the problem of low carrier mobility of graphene prepared by conventional chemical vapor deposition. [0004] A method for preparing graphene by chemical vap...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26
Inventor 林耀朋张旭吴军
Owner SUZHOU AITESI FURTHER MATERIALS CO LTD
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