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Texturization additive for polycrystalline silicon slices and use method of texturization additive

By using texturing additives such as triamine citrate in the texturing process of polycrystalline silicon wafers, the problems of texture unevenness and high reflectivity caused by acidic solutions are solved, texturing can be carried out under conditions close to room temperature, and the cost is reduced. Temperature controls costs and improves battery performance stability.

Active Publication Date: 2013-11-27
JIANGSU JIEYANG ENERGY EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The texture effect of this acid solution is not very ideal, and the existing problems include: the size of the texture is large and the uniformity is not good, the color difference between different grains is obvious, and there are deep corrosion pits with macroscopic appearance such as black lines , the surface reflectivity is high, and the texture stability is not good

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A method for making texture of a polycrystalline silicon wafer, which takes the following process steps:

[0021] 1) Preparation of velvet additives: Dissolve 0.2g of triamine citrate, 0.1g of polyvinylpyrrolidone, 0.1g of polyvinyl alcohol, and 2g of citric acid in deionized water to obtain 100g of velvet additives;

[0022] 2) Configure the texturing solution: mix 7kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49%) and 25kg of HNO3 aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 69%) dissolved in deionized water to obtain 100kg of acid solution; then add 100g of the texturing additive made in step 1) to the acid solution to obtain the texturing liquid;

[0023] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 5°C, and the texturing time is 180s.

Embodiment 2

[0025] A method for making texture of a polycrystalline silicon wafer, which takes the following process steps:

[0026] 1) Preparation of velvet additives: using deionized water as a solvent, dissolve 3 g of triamine citrate, 6 g of polyvinyl pyrrolidone, 1.2 g of polyvinyl alcohol, and 15 g of citric acid in deionized water to obtain 600 g of velvet additives;

[0027] 2) Configure the texturing solution: mix 14kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49%) and 50kg of HNO3 aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 69%) and mix to obtain 100kg of acid solution; then add 600g of the texturing additive made in step 1) to the acid solution to obtain the texturing solution;

[0028] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 25°C, and the texturing time is 45s.

Embodiment 3

[0030] A method for making texture of a polycrystalline silicon wafer, which takes the following process steps:

[0031] 1) Preparation of texturing additives: using deionized water as a solvent, dissolve 1.2 g of triamine citrate, 1.5 g of polyvinylpyrrolidone, 0.45 g of polyvinyl alcohol, and 6.9 g of citric acid in deionized water to obtain 300 g of texturing additives;

[0032] 2) Configure the texturing solution: mix 10kg of HF aqueous solution (the mass percentage of HF in the HF aqueous solution is 49%) and 40kg of HNO3 aqueous solution (HNO 3 HNO in aqueous solution 3 The mass percent content is 69%) dissolved in deionized water to obtain 100kg of acid solution; then add 300g of the texturing additive made in step 1) to the acid solution to obtain the texturing liquid;

[0033] 3) Texturing: Dip the polysilicon cell into the texturing solution for surface texturing, the texturing temperature is 12°C, and the texturing time is 100s.

[0034] figure 1 A scanning elect...

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Abstract

The invention provides a texturization additive for polycrystalline silicon slices. The invention further provides a texturization liquid used for texturization for the polycrystalline silicon slices, which contains an acid solution and the texturization additive for the polycrystalline silicon slices. The invention further provides a texturization method for the polycrystalline silicon slices, which is used for performing surface texturization on the polycrystalline silicon slices by virtue of the texturization liquid. The texturization additive for the polycrystalline silicon slices is applied to texture surface production for the polycrystalline silicon slices, and capable of obtaining a micro-structure texture surface which is good in uniformity and free of obvious chromatic aberration among crystalline particles, so that reflectivity is decreased, and the generation quantity of black lines is effectively reduced; the texturization additive for the polycrystalline silicon slices is used for changing a reaction mechanism and controlling a reaction speed, so that texturization can be performed in an approximate room-temperature condition, and temperature control cost is greatly decreased; roller trace can also be effectively removed, so that the silicon slices are cleaner and higher in matching with the next process, and battery performance is more stable.

Description

technical field [0001] The invention relates to an additive for making texture of a polycrystalline silicon wafer and a method for using the same. Background technique [0002] In the manufacturing process of polycrystalline silicon solar cells, texturing the surface of silicon wafers is a key link. The effect of texturing directly affects the conversion efficiency and yield of the final cell. Since polycrystalline silicon wafers are composed of crystal grains with different crystal orientations, and the crystal orientations of each crystal grain are randomly distributed, in the general texturing process, the wet chemical etching method of acidic solution is often used to texture the surface of polycrystalline silicon wafers. The texturing process is based on the principle of isotropic corrosion of silicon by acidic solution, forming similar pit-like textures on the surface of different grains of the silicon wafer, and the morphology of the texture has nothing to do with th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C23F1/24
CPCY02E10/546H10F77/703H10F10/14C09K13/00H01L21/306H10F71/00Y02E10/547H10F71/1221C09K13/08H01L21/30604
Owner JIANGSU JIEYANG ENERGY EQUIP CO LTD
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