Texturization additive for polycrystalline silicon slices and use method of texturization additive
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- JIANGSU JIEYANG ENERGY EQUIP CO LTD
- Publication Date
- 2013-11-27
Abstract
Description
technical field
[0001] The invention relates to an additive for making texture of a polycrystalline silicon wafer and a method for using the same. Background technique
[0002] In the manufacturing process of polycrystalline silicon solar cells, texturing the surface of silicon wafers is a key link. The effect of texturing directly affects the conversion efficiency and yield of the final cell. Since polycrystalline silicon wafers are composed of crystal grains with different crystal orientations, and the crystal orientations of each crystal grain are randomly distributed, in the general texturing process, the wet chemical etching method of acidic solution is often used to texture the surface of polycrystalline silicon wafers. The texturing process is based on the principle of isotropic corrosion of silicon by acidic solution, forming similar pit-like textures on the surface of different grains of the silicon wafer, and the morphology of the texture has nothing to do with th...