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Method for preparing polycrystalline silicon film by utilizing reusable substrate

A technology for polysilicon thin films and substrates, applied in sustainable manufacturing/processing, climate sustainability, final product manufacturing, etc., to achieve the effect of improving quality, overcoming impurity diffusion, and optimizing production processes

Inactive Publication Date: 2013-12-04
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Two core issues in developing solar cells are conversion efficiency and cost

Method used

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  • Method for preparing polycrystalline silicon film by utilizing reusable substrate
  • Method for preparing polycrystalline silicon film by utilizing reusable substrate
  • Method for preparing polycrystalline silicon film by utilizing reusable substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] according to Figure 1-3 According to the schematic diagram, a polysilicon film is prepared according to the following steps:

[0023] Step 1: Using a silicon oxide ceramic plate as a substrate, the purity of the silicon oxide ceramic plate is 99.999%;

[0024] Step 2: Coating a graphite film on the substrate with a chemical vapor deposition method, the thickness of the graphite film is 5 microns;

[0025] Step 3: preparing a polysilicon film by chemical vapor deposition on the graphite film-coated substrate;

[0026] Step 4: Using an annealing method to separate the polysilicon film from the substrate, heat the ceramic plate on which the polysilicon film has been deposited to 1000° C. under the protection of hydrogen or nitrogen, and then turn off the heating power and cool to room temperature.

[0027] Step 5: The separated substrate is used to repeatedly deposit the polysilicon film.

Embodiment 2

[0029] according to Figure 1-3 According to the schematic diagram, a polysilicon film is prepared according to the following steps:

[0030] Step 1: Using a silicon nitride ceramic plate as the substrate, the purity of the ceramic plate substrate is 99.999%;

[0031] Step 2: Coating a graphite film on the substrate by magnetron sputtering, the thickness of the graphite film is 7 microns;

[0032] Step 3: preparing a polysilicon film by chemical vapor deposition on the graphite film-coated substrate;

[0033] Step 4: Using an annealing method to separate the polysilicon film from the substrate, heat the ceramic plate on which the polysilicon film has been deposited to 1200° C. under the protection of hydrogen or nitrogen, and then turn off the heating power and cool to room temperature.

[0034] Step 5: The separated substrate is used to repeatedly deposit the polysilicon film.

Embodiment 3

[0036] according to Figure 1-3 According to the schematic diagram, a polysilicon film is prepared according to the following steps:

[0037] Step 1: Using a silicon oxide ceramic plate as a substrate, the purity of the silicon oxide ceramic plate is 99.999%;

[0038] Step 2: Coating a graphite film on the substrate with a chemical vapor deposition method, the thickness of the graphite film is 3 microns;

[0039] Step 3: preparing a polysilicon film by chemical vapor deposition on the graphite film-coated substrate;

[0040] Step 4: Using an annealing method to separate the polysilicon film from the substrate, heat the ceramic plate on which the polysilicon film has been deposited to 800° C. under the protection of hydrogen or nitrogen, and then turn off the heating power supply and cool to room temperature.

[0041] Step 5: The separated substrate is used to repeatedly deposit the polysilicon film.

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Abstract

The invention discloses a method for preparing a polycrystalline silicon film by utilizing a reusable substrate, belonging to the technical field of polycrystalline silicon films. The method comprises the steps of: depositing the polycrystalline silicon film on a ceramic plate which is coated with a graphite film, and separating the polycrystalline silicon film from the substrate by adopting an annealing way so as to prepare the polycrystalline silicon film. The polycrystalline silicon film can be repeatedly deposited on the ceramic plate which is coated with the graphite film. As the high-quality ceramic plate is adopted as the substrate, the polycrystalline silicon film can be separated from the substrate, and the high-quality substrate is reusable, the method for preparing the polycrystalline silicon film by utilizing the reusable substrate greatly reduces the manufacturing cost of a solar cell, optimizes the production process, overcomes the disadvantages such as impurity diffusion caused by low-price substrate, mismatching of the substrate and the film and high defect density of the film, reduces stress of the polycrystalline silicon film during the deposition or crystallization, and also improves the quality of the polycrystalline silicon film.

Description

technical field [0001] The invention belongs to the technical field of polysilicon thin films, and in particular relates to a method for preparing polysilicon thin films using a reusable substrate. Background technique [0002] With the popularization of sustainable development, environmental protection and other concepts, as well as the depletion of conventional fossil energy, the use of solar radiation energy is the only way for human survival and development. Two core issues in developing solar cells are conversion efficiency and cost. Silicon is one of the most abundant elements in the earth's crust, and it can be said to be inexhaustible. Moreover, silicon is the most in-depth researched material so far, and the research is very mature in terms of material preparation and material structure and performance characterization. Therefore, silicon solar cells have become the first choice for human beings to utilize solar energy. At present, the vast majority of commercial ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20
CPCY02P70/50
Inventor 陈诺夫辛雅焜何海洋吴强弭辙白一鸣高征
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)