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Surface coarsening method of polycrystalline silicon plate

A polysilicon plate, roughening technology, applied in chemical instruments and methods, crystal growth, post-processing details, etc., can solve the problems of post-processing inconvenience, achieve the effects of reducing usage, improving conversion efficiency, and reducing production costs

Inactive Publication Date: 2013-12-18
SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process will discharge a large amount of concentrated acid waste liquid, which will bring a lot of inconvenience to the post-treatment

Method used

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  • Surface coarsening method of polycrystalline silicon plate
  • Surface coarsening method of polycrystalline silicon plate
  • Surface coarsening method of polycrystalline silicon plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0071] S11: Electrode cleaning: select a polycrystalline silicon wafer with a size of 20.0mm×20.0mm, first clean it with ultrasonic for 5 minutes, then clean it with absolute ethanol for 3 minutes, then clean it with ultrasonic for 5 minutes, then wash it repeatedly with absolute ethanol, and finally protect it with nitrogen Standby; use tantalum sheet as the cathode sheet, first use ultrasonic cleaning for 5min, and then use nitrogen protection for standby. Test the resistance change of the above polysilicon wafer and tantalum wafer to ensure good contact between the polysilicon wafer and the tantalum wafer;

[0072] S12: Solution preparation: prepare a corrosion electrolyte, mix hydrofluoric acid and absolute ethanol at a volume ratio of 1:1 to prepare a corrosion electrolyte; the total volume is 380ml, the pH value is 0.7, and the temperature is 15°C.

[0073] S13: Electrochemical corrosion reaction: Establish a working electrode and an inert electrode in a PP reaction tank...

Embodiment 2

[0077] S21: Electrode cleaning: select a polysilicon wafer with a size of 20.0mm×20.0mm, first use ultrasonic cleaning for 4 minutes, then clean it with absolute ethanol for 1 minute, then use ultrasonic cleaning for 4 minutes, then wash it repeatedly with absolute ethanol, and finally protect it with nitrogen Standby; use tantalum sheet as the cathode sheet, first use ultrasonic cleaning for 4min, and then use nitrogen protection for standby. Test the resistance change of the above polysilicon wafer and tantalum wafer to ensure good contact between the polysilicon wafer and the tantalum wafer;

[0078] S22: Solution preparation: prepare a corrosion electrolyte, mix hydrofluoric acid and absolute ethanol at a volume ratio of 1:2 to prepare a corrosion electrolyte; the total volume is 380ml, the pH value is 1.2, and the temperature is 17°C.

[0079] S23: Electrochemical corrosion reaction: Establish a working electrode and an inert electrode in a PP reaction tank with a size of...

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Abstract

The invention provides a surface coarsening method of a polycrystalline silicon plate. The surface coarsening method comprises the following steps of corroding polycrystalline silicon by an electrochemical method: firstly, putting a polycrystalline silicon slice in a corrosion tank, connecting the polycrystalline silicon slice to the positive pole of a power source as an anode and connecting a noble metal to the negative pole of the power source as a cathode, and forming holes in the surface of the polycrystalline silicon under the action of an external electric field; then performing chemical corrosion in an HF-C2H5OH system, thereby obtaining a microcrack coarse surface with an optimized depth-width ratio by regulating process factors such as the mixing ratio of hydrofluoric acid to absolute ethyl alcohol, corrosion time and current density. The reflectivity of incident light is reduced by increasing the reflection times of the incident light on the surface of the silicon slice, and the absorption of visible light is enhanced; as a result, the conversion efficiency of a solar battery can be improved. In addition, the electrochemical corrosion method provided by the invention also reduces the utilization amount of hydrofluoric acid; due to recycling of a corrosive liquid, the production cost of the solar battery can be greatly reduced.

Description

technical field [0001] The invention belongs to the field of polycrystalline silicon solar cells, in particular to a method for roughening the surface of a polycrystalline silicon plate. Background technique [0002] The current global energy and environmental issues are becoming more and more serious. Various countries have promulgated some laws and regulations to develop renewable energy and environmental protection measures. my country also has policies and measures for sustainable development to ensure that future development can continue. As we all know, the energy on the earth comes from the sun, and solar energy is a clean and sustainable energy source, so there is the use of solar energy to generate electricity, and the advent of silicon solar cells. Among them, silicon solar cells play a major role in silicon wafers, and the materials of silicon wafers are divided into polycrystalline silicon and single crystal silicon. Compared with monocrystalline silicon wafers,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25F3/12C30B33/10
Inventor 刘白刘力睿
Owner SHENZHEN INSTITUTE OF INFORMATION TECHNOLOGY