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N-type crystalline silicon and its preparation method

A crystalline silicon, N-type technology, applied in the field of N-type crystalline silicon and its preparation, can solve problems such as difficulty in accurately controlling resistivity

Active Publication Date: 2016-04-27
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, directly doping the P-type master alloy with the N-type master alloy is difficult to achieve the purpose of precisely controlling the resistivity.

Method used

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  • N-type crystalline silicon and its preparation method
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  • N-type crystalline silicon and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0023] Please refer to figure 1 , Discloses a preparation method of N-type crystalline silicon, including the following steps:

[0024] S110. Put silicon material containing N-type dopant into the crucible, wherein the inside of the side wall of the crucible is coated with a P-type doping compensator coating, and the position of the P-type doping compensator coating is Within the range of the height difference between the surface of the silicon liquid after melting the silicon material containing the N-type dopant and the crystalline silicon generated by the silicon liquid. Please refer to figure 2 The height of the surface of the silicon liquid after the N-type dopant silicon material melted in the crucible from the bottom of the crucible is L1, the height of the crystalline silicon generated by the silicon liquid is L2, and the position of the P-type doping compensator coating 110 is Between L1 and L2, the height of the crystalline silicon is the height from the solid surface ...

Embodiment 1

[0033] 1. Dilute a certain amount of boron powder with silicon powder and quartz powder with water and add an appropriate amount of binder to make the coating material.

[0034] 2. Spray silicon nitride coating on the inner wall of the crucible.

[0035] 3. Then the coating position is determined by calculation, and the prepared raw materials are sprayed or brushed on the calculated position range to form a layer of coating, in which an ingot of 480kg is charged, and the inner diameter of the crucible is 800mm. It is calculated that the height of the silicon liquid surface after melting is 294mm, and the height of the crystal after crystal growth is 322mm, it can be determined that the coating position is between 292-322mm from the bottom of the crucible.

[0036] 4. Put 480kg of polysilicon and silicon-phosphorus master alloy mixture into the crucible.

[0037] 5. Heating and melting, directional solidification, make silicon liquid generate crystalline silicon. In the process of cry...

Embodiment 2

[0039] 1. Dilute a certain amount of silicon-boron alloy with silicon powder and quartz powder with water and add an appropriate amount of binder to make the coating material.

[0040] 2. Determine the position of the coating by calculation, and fix the prepared coating material in the determined position range by spraying or brushing to form a layer of compensating ability, in which the ingot and crucible are charged with 800kg The inner diameter is 1000mm, the height of the silicon liquid surface after melting is 314mm, and the height of the crystal after crystal growth is 343mm, the coating position is determined to be between 314-343mm from the bottom of the crucible.

[0041] 3. Then continue to spray the silicon nitride coating on the inner wall of the crucible.

[0042] 4. Put 800kg of polysilicon and arsenic powder mixture into the crucible.

[0043] 5. Directional solidification will melt the original polysilicon material and form crystalline silicon. In the process of cryst...

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Abstract

The invention relates to a method for preparing N-type crystalline silicon, comprising the following steps: putting silicon material containing N-type dopant into a crucible, wherein the inner side of the side wall of the crucible is coated with a P-type doping compensator coating, The position of the P-type doping compensator coating is within the range of the height difference between the surface of the silicon liquid after the silicon material containing the N-type dopant is melted and the crystalline silicon generated by the silicon liquid; Solidification, so that the silicon liquid containing N-type dopant generates N-type crystalline silicon. The preparation method of the above-mentioned N-type crystalline silicon can perform doping compensation in the direction of crystal growth, thus solving the problem that the resistivity distribution range of the N-type crystalline silicon ingot is too large in the direction of crystal growth, and precisely controlling the distribution of the entire N-type crystalline silicon ingot. Resistivity. In addition, an N-type crystalline silicon prepared by the above method is also provided.

Description

Technical field [0001] The invention relates to the technical field of photovoltaic silicon wafer production, in particular to an N-type crystalline silicon and a preparation method thereof. Background technique [0002] At present, boron-doped polysilicon is widely used in the solar cell manufacturing industry. However, since the diameter of the boron atoms in the substitution position in the boron-doped polysilicon is smaller than that of the silicon atoms, under light, the boron atoms will combine with oxygen in the silicon to form a boron-oxygen complex. The boron-oxygen complex is a deep-level recombination center in silicon, which will reduce the lifetime of minority carriers, resulting in a reduction in the photoelectric conversion efficiency of solar cells by 2 to 3%. This phenomenon is the efficiency degradation of solar cells. It is very unfavorable for solar cell photovoltaic power generation. Studies have found that substituting N-type dopants for P-type doping comp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B11/00
Inventor 张帅胡亚兰游达朱常任
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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