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N-type crystalline silicon and preparation method thereof

A crystalline silicon, N-type technology, applied in the field of N-type crystalline silicon and its preparation, can solve problems such as difficult to achieve precise control of resistivity

Active Publication Date: 2013-12-18
JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, directly doping the P-type master alloy with the N-type master alloy is difficult to achieve the purpose of precisely controlling the resistivity.

Method used

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  • N-type crystalline silicon and preparation method thereof
  • N-type crystalline silicon and preparation method thereof
  • N-type crystalline silicon and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0023] Please refer to figure 1 , discloses a preparation method of N-type crystalline silicon, comprising the following steps:

[0024] S110. Throwing silicon material containing N-type dopant into the crucible, wherein the inner side of the side wall of the crucible is coated with a P-type doping compensator coating, and the position of the P-type doping compensator coating is at the input The height difference between the surface of the silicon liquid after melting the silicon material containing the N-type dopant and the crystalline silicon generated by the silicon liquid is within the range. Please refer to figure 2 The height of the silicon liquid surface from the bottom of the crucible after the silicon material of the N-type dopant is melted in the crucible is L1, the height of the crystalline silicon generated by the silicon liquid is L2, and the position of the P-type doped compensator coating 110 is at Between L1 and L2, the height of crystalline silicon is the h...

Embodiment 1

[0033] 1. Dilute a certain amount of boron powder with silicon powder and quartz powder with water and add an appropriate amount of binder as the raw material for coating.

[0034] 2. Spray silicon nitride coating on the inner wall of the crucible.

[0035] 3. Then determine the coating position by calculation, and coat the prepared raw materials within the calculated position range by spraying or brushing to form a layer of coating, in which the ingot with a charging capacity of 480kg and the inner diameter of the crucible is 800mm, It is calculated that the height of the silicon liquid surface after melting is 294mm, and the crystal height after the crystal growth is 322mm, so it can be determined that the coating position is between 292-322mm from the bottom of the crucible.

[0036] 4. Put 480kg of polysilicon and the mixture of silicon-phosphorus master alloy into the crucible.

[0037] 5. Heating and melting, directional solidification, so that the silicon liquid can ge...

Embodiment 2

[0039] 1. Dilute a certain amount of silicon-boron alloy with silicon powder and quartz powder with water and add an appropriate amount of binder as the raw material for coating.

[0040]2. The position of the coating is determined by calculation, and the prepared coating raw materials are fixed in the determined position range by spraying or brushing to form a layer of coating with compensation ability. The ingot with a charging capacity of 800kg, the crucible The inner diameter is 1000mm, the height of the silicon liquid surface after melting is 314mm, and the crystal height after the crystal growth is 343mm, so the coating position is determined to be between 314-343mm from the bottom of the crucible.

[0041] 3. Then continue to spray silicon nitride coating on the inner wall of the crucible.

[0042] 4. Put 800kg of the mixture of polysilicon and arsenic powder into the crucible.

[0043] 5. Directional solidification, which melts the primary polysilicon material and for...

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Abstract

The invention relates to a preparation method of N-type crystalline silicon. The preparation method comprises the following steps of putting silicon containing an N-type dopant into a crucible, wherein the inner side of the crucible is coated with a P-type doping compensation agent coating, and the P-type doping compensation agent coating is in the range of the height different between the liquid silicon surface formed by the molten silicon containing the N-type dopant and crystalline silicon formed by the liquid silicon; and enabling the liquid silicon containing the N-type dopant to generate the N-type crystalline silicon after the silicon is molten and solidified directionally. The doping compensation can be performed in the crystal growth direction in the preparation method of the N-type crystalline silicon, accordingly the problem that the resistivity distribution range of an N-type crystalline silicon ingot in the crystal growth direction is over large is solved, and the resistivity of the whole N-type crystalline silicon ingot is controlled accurately. In addition, the invention further provides the N-type crystalline silicon prepared by adopting the preparation method.

Description

technical field [0001] The invention relates to the technical field of photovoltaic silicon chip production, in particular to an N-type crystalline silicon and a preparation method thereof. Background technique [0002] At present, boron-doped polysilicon is widely used in the solar cell manufacturing industry. However, since the diameter of the boron atom at the substitution site in the boron-doped polysilicon is smaller than that of the silicon atom, the boron atom will combine with the oxygen in the silicon to form a boron-oxygen complex under light irradiation. The boron-oxygen complex is a deep-level recombination center in silicon, which will reduce the lifetime of minority carriers, thereby reducing the photoelectric conversion efficiency of solar cells by 2 to 3%. This phenomenon is the efficiency attenuation of solar cells. This attenuation It is very unfavorable for solar cell photovoltaic power generation. Studies have found that replacing the P-type doping comp...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B11/00
Inventor 张帅胡亚兰游达朱常任
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV
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