Photoetching image device and method for realizing super-resolution imaging through enhancing illumination numerical aperture

A technology of imaging equipment and numerical aperture, which is applied in the direction of microlithography exposure equipment, photolithography exposure equipment, etc., can solve the problems of mask loss, affecting lithography efficiency, and uniformity to be further improved, so as to improve uniformity, Imaging Contrast Improvement Effect

Active Publication Date: 2013-12-25
INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above method has improved the resolution of imaging graphics, the contrast of image intensity and the uniformity of graphics still need to be further improved
In addition, the air spacer layer (working gap) is almost zero, seriously affecting the lithography efficiency and causing mask loss

Method used

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  • Photoetching image device and method for realizing super-resolution imaging through enhancing illumination numerical aperture
  • Photoetching image device and method for realizing super-resolution imaging through enhancing illumination numerical aperture
  • Photoetching image device and method for realizing super-resolution imaging through enhancing illumination numerical aperture

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Embodiment 1

[0034] Example 1, when the mask pattern is a one-dimensional grating line pattern, the line width of the pattern layer is 35nm, and the period is 70nm, high-contrast super-resolution imaging lithography is realized by using a high numerical aperture illumination field.

[0035] The high numerical aperture illumination field lithographic imaging equipment is shown in Figure 1(a) of the specification, and the specific conditions are: 1 is Al with high refractive index 2 o 3 Triangular prism; 2 is Al 2 o 3 The mask substrate of the material; 3 is a one-dimensional line grating pattern, the material is Cr, the grating depth is 50nm, the period is 70nm, and the duty ratio is 0.5; 4 is the material PMMA for filling the pattern layer, and the uniform film thickness is 10nm; 5 is the imaging Ag layer, thickness 15nm; 6 is the transmission-assisted imaging Ag layer, thickness 15nm; 7 is the photosensitive layer, AR-P3170 photoresist, thickness 30nm; 8 is the reflection-assisted imagi...

Embodiment 2

[0039] Embodiment 2, when the mask pattern is a two-dimensional pattern arranged in a two-dimensional orthogonal direction, the line width of the pattern layer is 35nm, and the distance between two adjacent lines is 70nm, using a high numerical aperture illumination field to achieve a high contrast super Resolution imaging lithography.

[0040] The high numerical aperture illumination field lithographic imaging equipment is shown in Figure 1(b) of the specification, and the specific conditions are: 1 is Al with a high refractive index 2 o 3 Trapezoidal prism or pyramidal prism; 2 is Al 2 o 3 The mask base of the material; 3 is a two-dimensional mask pattern arranged in a two-dimensional orthogonal direction, the line width of the pattern layer is 35nm, and the distance between two adjacent lines is 70nm (in the accompanying drawings Figure 4 4 is the material PMMA filling the graphic layer, with a uniform film thickness of 10nm; 5 is the imaging Ag layer, with a thickness ...

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Abstract

The invention provides a photoetching image device and method for realizing super-resolution imaging through enhancing an illumination numerical aperture. An exemplary photoetching imaging device can comprise an illumination light beam generating device configured to generate an illuminating light beam, wherein the illuminating light beam has an illuminating field with a numerical aperture (NA) being more than 0. The illuminating light beam is capable of imaging a mask pattern in a photosensitive coating space through a mask and an imaging layer.

Description

technical field [0001] The present disclosure generally relates to the technical field of nano-lithography processing, and more specifically, relates to a lithography imaging device and a lithography imaging method for realizing high-contrast super-resolution imaging by using a high numerical aperture illumination field. Background technique [0002] With the development of modern optical imaging technology, diffraction phenomenon has become the main obstacle to limit the resolution of imaging optical system. The realization of sub-wavelength optical super-resolution imaging will be of great significance to the development of high-tech fields such as nano-lithography processing and high-resolution microscopic imaging. Super lens (Super lens) imaging technology is a new type of ultra-high resolution optical imaging technology that has attracted more attention in recent years. It originated from the negative refractive index perfect lens (Perfect lens) proposed by Pendry. It...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 罗先刚王长涛赵泽宇王彦钦胡承刚蒲明薄李雄黄成何家玉罗云飞
Owner INST OF OPTICS & ELECTRONICS - CHINESE ACAD OF SCI
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