ZnS nano-crystalline film and preparation method and application thereof

Abstract

The invention provides a method for preparing a ZnS nano-crystalline film through chemical bath deposition, a prepared ZnS film and an application. The method comprises the following steps: (1) preparing a basic solution, water bath heating the basic solution, and meanwhile, constantly stirring the basic solution, wherein the ZnSO4 concentration in the basic solution is 0.01-0.2 mol / L, and the (NH4)2SO4 concentration is 0.01-0.1 mol / L; (2) when the temperature of the basic solution raises to 60-90 DEG C, adding ammonia water and thiourea, wherein the concentrations of the ammonia water and thiourea in the obtained mixed solution are respectively 0.5-3.0 mol / L and 0.1-0.5 mol / L; (3) vertically putting a substrate in the mixed solution, and dripping triethanolamine into the mixed solution; and (4) taking out the substrate after the deposition thickness of the ZnS film on the substrate reaches a preset value, and cleaning and storing the substrate. The ZnS nano-crystalline film prepared by the method provided by the invention is uniform and dense.

Description

technical field [0001] The invention belongs to the technical field of preparation of ZnS nanocrystalline semiconductor thin films, and in particular relates to the preparation of ZnS nanocrystalline semiconductor thin films by chemical methods. Background technique [0002] In view of the current global warming, the continuous deterioration of the human ecological environment and the shortage of conventional fossil energy, solar photovoltaic power generation technology has been supported and valued by governments of various countries. The current increasingly serious energy crisis forces people to develop low-cost, high-efficiency non-silicon thin-film solar cells. Non-silicon thin-film solar cells have attracted the interest of manufacturers due to their low production cost, high conversion efficiency, strong radiation resistance, and low light-induced attenuation. The output of non-silicon thin-film solar cells has grown rapidly. Materials used to prepare non-silicon thi...

AI Technical Summary

Problems solved by technology

In the buffer layer of CIGS and CZTS, the original production technology has always been to use CdS thin film, but the Cd element in CdS is highly toxic, which is harmful to human body and environment during production and use, and its use should be restricted

Therefore, it was later discovered that ZnS can replace CdS as a cadmium-free buffer layer, but the properties and characteristics of ZnS determine that when ZnS thin films are prepared by chemical methods, ZnS has the characteristics of difficult film formation and low preparation efficiency.

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