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Processing method of epitaxial wafer based on pss substrate

A processing method and technology of epitaxial wafers, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of high cost, inability to recycle multiple times, and inability to restore patterned morphology, etc., to achieve huge commercial value and reduce production costs Effect

Active Publication Date: 2016-03-16
FOCUS LIGHTINGS SCI & TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Using the existing sapphire substrate recycling method to recycle the PSS substrate cannot restore its original patterned appearance, only sapphire flat sheets can be obtained, and the cost of remanufacturing the PSS sapphire substrate is very high and cannot be repeated many times Recycling, etc., general epitaxy manufacturers do not have the conditions for such recycling

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  • Processing method of epitaxial wafer based on pss substrate
  • Processing method of epitaxial wafer based on pss substrate
  • Processing method of epitaxial wafer based on pss substrate

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Embodiment Construction

[0035] In order to enable those skilled in the art to better understand the technical solutions in the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described The embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0036] ginseng figure 2 As shown, the present invention discloses a processing method based on PSS substrate epitaxial wafers. After the epitaxy is completed, part of the epitaxial wafers are scrapped, and the GaN layer on the epitaxial wafers is decomposed using a vacuum oven, and then the surface of the baked PSS substrate is cleaned...

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Abstract

The invention discloses a PSS based epitaxial wafer processing method. The method comprises the following steps: S1, an epitaxial wafer provided with a PSS is baked in a vacuum baking furnace to remove water oxygen and organic impurities on the surface of the epitaxial wafer; S2, mixed gas of hydrogen and nitrogen is introduced for baking, so that a GaN layer on the surface of the PSS is decomposed; and S3, a mixed liquid of concentrated sulfuric acid and hydrogen peroxide is adopted for cleaning particles remained on the surface of the PSS after the baking is finished. With the adoption of the method, the problems that the PSS cannot be recycled completely and reused are solved, and the PSS can be completely restored without damaging patterns, so that the substrate can be epitaxially used again, the production cost is reduced, and a very huge commercial value is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a processing method based on PSS substrate epitaxial wafers. Background technique [0002] In the manufacturing process of LED (Light Emitting Diode, light-emitting diode) and other optoelectronic devices, sapphire substrates are widely used, which are usually divided into flat sapphire substrates and PSS substrates (Pattern Sapphire Substrate, patterned sapphire substrates). Among them, the PSS substrate is made on a flat sapphire substrate by processing a pattern array with a certain shape and a size on the order of micronano, which can significantly improve the crystal quality of the LED epitaxial layer, and can be placed on the LED substrate surface. A scattering and reflection effect is formed to increase the light extraction rate, thereby significantly improving the performance of the LED chip. Therefore, the PSS substrate is more and more widel...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00
CPCH01L33/0093
Inventor 陆昊宇陈伟刘慰华
Owner FOCUS LIGHTINGS SCI & TECH