Protection material for plasma spray header as well as preparation method and application method thereof

A technology for protecting materials and spraying heads, which is applied in the field of protective materials for ion spraying heads and its preparation, which can solve the problems of unfavorable maintenance, damage, and limitation of the service life of plasma equipment spraying systems, etc., and achieve excellent anti-plasma Corrosion, reduce production cost, improve the effect of hydration resistance

Inactive Publication Date: 2014-01-29
CHENGDU ULTRA PURE APPLIED MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the harsh plasma environment, during the semiconductor etching process, especially the plasma spray system of the etching machine is seriously damaged due to

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] Example 1

[0019] The protective material for the plasma shower head of this embodiment has a ratio of 0.5 wt% for calcium oxide (CaO) with a purity of 99.9wt%, and yttrium oxide (Y 2 O 3 ) Use 1 wt%, and the rest uses the main material-magnesium oxide (MgO) with a purity of 99.5 wt%.

[0020] During preparation, weigh the three powders according to the above-mentioned ratio, then place them in a ball mill and use ZTA ceramic balls to grind and mix them for 12 hours. The mixed powders are put into a mold for cold pressing, and then the materials are placed The crucible is placed on the sintering table of a vacuum graphite furnace, and vacuum is applied for pressureless sintering. Specifically, when the vacuum degree is less than 1x10 -2 Start heating at mbar, the heating rate is 10°C / min, and the sintering temperature is kept at 1500°C for 90 minutes, and then cooled naturally to obtain the finished protective material.

[0021] When the protective material is applied to the...

Example Embodiment

[0023] Example 2

[0024] The protective material for the plasma shower head of this embodiment has a ratio of: 1 wt% for calcium oxide (CaO) with a purity of 99.9wt% and yttrium oxide (Y 2 O 3 ) Use 0.5 wt%, and the rest is the main material-magnesium oxide (MgO) with a purity of 99.5 wt%.

[0025] Using the same preparation method and coating method as in Example 1, the coated plasma shower head is used in semiconductor etching production, and the service life can reach about 660 hours after testing.

Example Embodiment

[0026] Example 3

[0027] The protective material for the plasma shower head of this embodiment has a ratio of 1.5 wt% for calcium oxide (CaO) with a purity of 99.9wt% and yttrium oxide (Y 2 O 3 ) Use 1 wt%, and the rest uses the main material-magnesium oxide (MgO) with a purity of 99.5 wt%.

[0028] The plasma shower head after coating is obtained by the same preparation method and coating method as in Example 1 for use in semiconductor etching production. After testing, the service life can reach about 685 hours.

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PUM

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Abstract

The invention discloses a protection material for a plasma spray header and relates to a plasma equipment anticorrosion technology used in a semiconductor etching technique. The protection material for the plasma spray header mainly comprises magnesium oxide taken as a main material, calcium oxide with the doping content of 0.5-3wt% in the main material and yttrium oxide with the doping content of 0.5-5wt% in the main material. The invention also provides a preparation method and an application method of the protection material. By adopting the protection material, anticorrosion property of the plasma spray header in a high plasma environment for a long time can be obviously improved, and service life of the plasma spray header can be prolonged, so that production cost of a semiconductor material is reduced.

Description

technical field [0001] The invention relates to the anti-corrosion technology of the plasma equipment used in the semiconductor etching technology, in particular to a protective material used for the plasma shower head and its preparation method and application method. Background technique [0002] Semiconductor etching technology is a semiconductor production process technology that uses plasma or plasma and corrosive gas to achieve selective etching. However, due to the harsh plasma environment, during the semiconductor etching process, especially the plasma spray system of the etching machine is seriously damaged due to the long-term plasma bombardment, which is very unfavorable for the maintenance of plasma equipment, and greatly limits the plasma The service life of the equipment sprinkler system. [0003] Therefore, how to effectively protect the spray system of plasma equipment in a high-density plasma environment so that it can be used for a long time has become a k...

Claims

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Application Information

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IPC IPC(8): C04B35/04C04B35/622
Inventor 柴林
Owner CHENGDU ULTRA PURE APPLIED MATERIAL
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