Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone

A processing method and a processing device technology, which are applied in the field of wafer chamfering processing and devices, and tools for adjusting the angle of abrasive tools, can solve problems such as partial wear of abrasive tools, shortened contact length, and time-consuming chamfering processing, and achieve Effects of increased throughput and extended contact length

Active Publication Date: 2014-02-19
DAITO ELECTRON
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0034] here, as Figure 22 As shown, since the centerlines L, L in the width direction of the contact end surfaces 4a, 4a of the cylinders of the two cup-shaped grooveless grinders 4, 4 are

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone
  • Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone
  • Method for chamfering wafer, apparatus for chamfering wafer, and jig for adjusting angle of grindstone

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0086] [Wafer chamfering processing method]

[0087] Hereinafter, a method for processing a chamfer of a wafer according to an embodiment of the present invention will be described.

[0088] As an example, the chamfering processing method of the wafer is as Figure 1~6 As shown, the outer peripheral surfaces of the disc-shaped grooveless abrasive tools 3, 3 formed in the shape of a disc are brought into contact with the wafer 1, and two disc-shaped grooveless abrasive tools 3, 3 are simultaneously contacted with respect to one wafer 1 And for chamfering.

[0089] In the embodiment of the present invention, the wafer 1 is placed on the turntable 2a (refer to Figure 4 ) Is placed concentrically on the upper side, and the wafer 1 rotating with the turntable 2a is simultaneously chamfered using two disc-shaped grooveless abrasive tools 3 and 3.

[0090] The two disc-shaped grooveless abrasive tools 3, 3 are close to the same part of the peripheral end 1b, and the side surfaces facing eac...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a method for chamfering a wafer, an apparatus for chamfering a wafer, and a jig for adjusting the angle of a grindstone. In the method for chamfering a wafer by using two groove-free grindstones, the time for reshaping (finishing) the groove-free grindstones is reduced. In addition, the contact length between the groove-free grindstones and a wafer is increased, and the time for hole shrinkage machining of the wafter and the time for machining the wafter into a wafer having a desired cross section profile are shortened. The method for chamfering a wafer includes loading a wafer (1) on a rotary bench in a centering manner and making the wafer rotate to enable two groove-free grindstones (3, 3) machining the rotary wafer to contact with the periphery (1a) of the wafer so as to chamfer the diameter or the cross section profile of the wafer (1). The method is characterized in that the above two groove-free grindstones (3, 3) are configured in a way that central lines (L, L) of the grindstones along the width are close to the side of the rotary axis (S) of the wafer (1) placed on the rotary bench, and are in contact with the wafer (1).

Description

technical field [0001] The present invention relates to a method and an apparatus for processing a wafer used as a material of a semiconductor device and a peripheral end portion of a wafer on which a semiconductor device is mounted. Background technique [0002] Disc-shaped thin plates used as substrates for integrated circuits such as various crystalline wafers and other semiconductor device wafers, and other disc-shaped thin plates formed of hard materials containing metal materials, such as silicon (Si) single crystal, gallium arsenide (GaAs), crystal, quartz, sapphire, ferrite, silicon carbide (SiC), etc. chamfering of disc-shaped thin plates (simply referred to as wafers) Among them, there is the following technical proposal, that is, in order to obtain the cross-sectional shape and the accuracy of the cross-sectional shape, processing is performed using a grooved forming grinder having a groove formed with a groove of the outer shape of the peripheral end of the wafer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B24B9/06B24B41/00
CPCB24B9/06B24B41/00B24B37/04H01L21/30625
Inventor 片山一郎
Owner DAITO ELECTRON
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap