Semiconductor assembly with built-in stopper, and manufacturing method of same
A technology for semiconductors and positioning parts, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the vertical and lateral displacement of chips, without providing chip attachment program control or adjustment, and cannot provide a proper chip or effective methods etc.
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Embodiment 1
[0044] figure 1 and 2 is a cross-sectional view of a method for forming a spacer on a dielectric layer in an embodiment of the present invention, and Figure 2A for figure 2 top view.
[0045] figure 1 It is a cross-sectional view of a laminated substrate including a metal layer 11 , a dielectric layer 21 , and a support plate 23 . The metal layer 11 shown in the figure is a copper layer with a thickness of 35 μm, however, the metal layer 11 can also be various metal materials, and is not limited to the copper layer. In addition, the metal layer 11 can be deposited on the dielectric layer 21 by various techniques, including electroplating, electroless plating, evaporation, sputtering, and combinations thereof to deposit a single-layer or multi-layer structure, and its thickness is preferably in the range of 10 to 200 µm.
[0046] The dielectric layer 21 is generally made of epoxy resin, glass epoxy resin, polyimide, and the like, and has a thickness of 50 microns. In t...
Embodiment 2
[0069] Figure 10 and Figure 10A Each is another embodiment of the present invention, a cross-sectional view and a top view of another semiconductor assembly 102 with a guide 115, wherein the guide 115 is arranged close to the peripheral edge of the strengthening layer 41, and the additional first conductive blind The holes 243 are in direct contact with the reinforcing layer 41 .
[0070] In this embodiment, the semiconductor assembly 102 is made by the method shown in Embodiment 1, except that when removing a selected part of the metal layer 11, the positioning member 113 is formed and the configuration guide 115 is formed to accurately define the reinforcement. The arrangement position of the layer 41 and an additional first conductive blind hole 243 are formed, which are in direct contact with the strengthening layer 41 . The configuration guide 115 extends upward from the first insulating layer 211 beyond the attachment surface of the reinforcement layer 41 , and is la...
Embodiment 3
[0072] Figure 11-14 In yet another embodiment of the present invention, a cross-sectional view of a method for manufacturing yet another semiconductor assembly having a support plate, a dielectric layer, a semiconductor element, a spacer, a strengthening layer, and a build-up circuit.
[0073] For the purpose of brevity, any statement in Example 1 may be incorporated into the same application section here, and the same statement will not be repeated.
[0074] Figure 11 for Figure 1-4 The cross-sectional view of the structure prepared in the step, except that the semiconductor element 31 is arranged on the dielectric layer 21 under the condition that the inactive surface 313 faces the dielectric layer 21, and the support plate 23 in the accompanying drawings is 50 microns in thickness copper plate.
[0075] Figure 12 It is a cross-sectional view of the structure where the first insulating layer 211 is formed on the active surface 311 of the semiconductor device 31 and t...
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