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Epitaxial growth method for LED structure containing superlattice barrier layer and structure body of LED structure

A technology of LED structure and epitaxial growth, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of high impedance of the light-emitting layer, and achieve the effect of reducing resistance and driving voltage

Active Publication Date: 2014-02-19
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a LED structure epitaxial growth method and its structure containing a superlattice barrier layer to solve the technical problem of high impedance of the light emitting layer

Method used

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  • Epitaxial growth method for LED structure containing superlattice barrier layer and structure body of LED structure
  • Epitaxial growth method for LED structure containing superlattice barrier layer and structure body of LED structure
  • Epitaxial growth method for LED structure containing superlattice barrier layer and structure body of LED structure

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Embodiment 1

[0066] The invention uses VEECO MOCVD to grow high-brightness GaN-based LED epitaxial wafers. Using high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic sources trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the source of aluminum, and the P-type dopant as magnesocene (CP 2 Mg), the substrate is (0001) sapphire, and the reaction pressure is between 100mbar and 800mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 2 , please refer to the step 5 Figure 4 ):

[0067] 1. Treat the sapphire substrate at high temperature for 5-6 minutes in a hydrogen atmosphere at 1100-1200°C;

[0068] 2. Lower the temperature to 600-650°C, and grow a low-temperature buffer layer...

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Abstract

The invention provides an epitaxial growth method for an LED structure containing a superlattice barrier layer and a structure body of the LED structure. Growth of a GaN:Si / GaNsuperlattice barrier layer in a growth light emitting layer MQW comprises the steps that In ions stop being added, the temperature is increased to 800-850 DEG C, a GaN layer grows on an InxGa(1-x) layer, SiH4 is added, a GaN:Si layer grows on the GaN layer in a reaction chamber, SiH4 is added and stops being added repeatedly, and the GaN layer and the GaN:Si layer are staggered to form the GaN:Si / GaNsuperlattice barrier layer; the ratio bewteen adding time and adding stopping time of GaN:SiH4 ranges from 6:1 to1:6. According to the epitaxial growth method, a light emitting layer GaN barrier layer which does not contain Si is replaced with the GaN:Si / GaNsuperlattice barrier layer, under the precondition that electric leakage and light emitting strength of a device are not affected, a resistance value of a light emitting layer is reduced, and driving voltage of the device can be reduced.

Description

technical field [0001] The invention relates to the technical field of LED epitaxial design, in particular to an epitaxial growth method and structure of an LED structure containing a superlattice barrier layer. Background technique [0002] At present, when domestic MOCVD manufacturers grow LED epitaxial layers, the traditional structure includes N layer, light emitting layer, and P layer, and the N layer uses SiH 4 As a dopant, the P layer adopts Cp 2 Mg is used as a dopant, and the light-emitting layer is composed of InGaN / GaN superlattice materials. The impedances of these three parts are: R 发光层 >R P层 >R N层 . Since the InGaN and GaN materials of the light-emitting layer do not add dopants, and the total thickness is generally 200-300nm, the resistance of this layer is higher than that of the doped N and P layers. [0003] The LED device is driven by cross-current, and the negative effect brought by the high impedance of the light-emitting layer is the increase...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
CPCH01L33/0075H01L33/025H01L33/06
Inventor 艾剑雄
Owner XIANGNENG HUALEI OPTOELECTRONICS